IRFB61N15DPBF International Rectifier, IRFB61N15DPBF Datasheet
IRFB61N15DPBF
Specifications of IRFB61N15DPBF
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IRFB61N15DPBF Summary of contents
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... Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes through … are on page 8 www.irf.com SMPS MOSFET IRFB61N15DPbF HEXFET V DSS 150V @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– ...
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... IRFB61N15DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Fig 2. Typical Output Characteristics 3 3.0 2.5 2.0 1.5 1.0 0.5 = 25V 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRFB61N15DPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 62A V = ...
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... IRFB61N15DPbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRFB61N15DPbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...
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... IRFB61N15DPbF D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1200 15V 1000 DRIVER 800 + 600 400 200 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b ...
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... Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFB61N15DPbF + - V =10V ...
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... IRFB61N15DPbF 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 3X 1.15 (.045) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...