IRF3710PBF International Rectifier, IRF3710PBF Datasheet

MOSFET N-CH 100V 57A TO-220AB

IRF3710PBF

Manufacturer Part Number
IRF3710PBF
Description
MOSFET N-CH 100V 57A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF3710PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3130pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
7.3 A
Gate Charge, Total
34 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
18 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
10 ns
Time, Turn-on Delay
8.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
57 A
Mounting Style
Through Hole
Gate Charge Qg
86.7 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.023Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF3710PBF

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l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
AR
DM
GS
STG
D
AR
J
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International Rectifier utilize
Parameter
Parameter


GS
GS
ƒ

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRF3710PbF
S
D
Max.
180
200
± 20
1.3
5.8
57
40
28
20
®
R
Power MOSFET
V
DS(on)
Max.
0.75
–––
62
DSS
TO-220AB
I
D
= 57A
PD - 94954D
= 100V
= 23m
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF3710PBF Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. ––– 0.50 ––– 94954D IRF3710PbF ® HEXFET Power MOSFET 100V DSS R = 23m DS(on 57A D S TO-220AB Max. Units 180 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...

Page 6

D.U 20V Charge 6 550 15V 440 DRIVER + 330 220 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + ƒ Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" TO-220AB package is not recommended for Surface ...

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