IXTQ96N25T IXYS, IXTQ96N25T Datasheet

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IXTQ96N25T

Manufacturer Part Number
IXTQ96N25T
Description
MOSFET N-CH 250V 96A TO-3P
Manufacturer
IXYS
Series
TrenchHV™r
Datasheet

Specifications of IXTQ96N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
29 mohm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
96A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
6100pF @ 25V
Power - Max
625W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
96 A
Power Dissipation
625 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
96
Rds(on), Max, Tj=25°c, (?)
0.029
Ciss, Typ, (pf)
6100
Qg, Typ, (nc)
114
Trr, Typ, (ns)
158
Trr, Max, (ns)
-
Pd, (w)
625
Rthjc, Max, (k/w)
0.20
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AS
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
V
V
V
V
V
V
Test Conditions
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 1mA
= 0.5 • I
DS
= 0V
D25
GS
, Notes 1, 2
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTH96N25T
IXTQ96N25T
IXTV96N25T
11..65 / 2.5..14.6
Characteristic Values
-55 ... +150
-55 ... +150
250
Min.
Maximum Ratings
1.13 / 10
3
± 30
250
250
250
625
150
300
260
6.0
5.5
4.0
96
75
Typ.
5
2
± 200 nA
Nm/lb.in.
250 μA
Max.
29 mΩ
5
5 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
g
J
V
I
R
TO-247 (IXTH)
G = Gate
S = Source
Features
Advantages
Applications
TO-3P (IXTQ)
PLUS220 (IXTV)
D25
Avalanche rated
International standard packages
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
G
S
D
= 250V
= 96A
≤ ≤ ≤ ≤ ≤
D
S
S
D = Drain
TAB = Drain
29mΩ Ω Ω Ω Ω
DS99863(09/07)
(TAB)
(TAB)
(TAB)

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IXTQ96N25T Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH96N25T IXTQ96N25T IXTV96N25T Maximum Ratings 250 = 1MΩ 250 GS ± 250 625 -55 ... +150 150 -55 ... +150 300 260 1. 11..65 / 2.5..14.6 6.0 5.5 4.0 Characteristic Values Min ...

Page 2

... DSS D 34 0.25 Characteristic Values Min. Typ. JM 158 23 1.8 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH96N25T IXTQ96N25T TO-247AD Outline Max Terminals Gate Source Dim. Millimeter nC Min 2.2 ...

Page 3

... V = 10V GS 180 8V 7V 160 140 120 6V 100 5V 2 2.4 2.8 3.2 = 10V 48A Value 125º 25ºC J 120 140 160 180 200 IXTH96N25T IXTQ96N25T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2 96A D 2 ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 130 120 110 100 25ºC 5.4 5.8 6.2 6 25ºC J 0.9 1 1.1 1.2 1.00 C iss C oss 0.10 C rss 0. IXTH96N25T IXTQ96N25T Fig. 8. Transconductance 100 I - Amperes D Fig. 10. Gate Charge 125V 25A 10mA ...

Page 5

... 15V 125V DS = 96A 85 95 105 115 125 48A, 96A d(off 2.5 Ω 15V GS = 125V 100 IXTH96N25T IXTQ96N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 2.5 Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 2.5 Ω 125V 48A ...

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