IRF6718L2TR1PBF International Rectifier, IRF6718L2TR1PBF Datasheet

IRF6718L2TR1PBF

Manufacturer Part Number

IRF6718L2TR1PBF

Description

MOSFET N-CH 25V 61A DIRECTFET L6

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6718L2TRPBF.pdf (10 pages)

Specifications of IRF6718L2TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

0.7 mOhm @ 61A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

61A

Vgs(th) (max) @ Id

2.35V @ 150µA

Gate Charge (qg) @ Vgs

96nC @ 4.5V

Input Capacitance (ciss) @ Vds

6500pF @ 13V

Power - Max

4.3W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric L6

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.4 mOhms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

270 A

Power Dissipation

83 W

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6718L2TR1PBFTR

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Applicable DirectFET Outline and Substrate Outline

Description

The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing

layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems.

The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The

IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.

‚

Absolute Maximum Ratings

www.irf.com

RoHS Compliant Containing No Lead and Bromide

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Very Low R

Optimized for Active O-Ring / Efuse Applications

Compatible with existing Surface Mount Techniques

@ T

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

DS(ON)

T J = 25°C

V GS, Gate -to -Source Voltage (V)

for Reduced Conduction Losses

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

I D = 61A

Parameter

@ 10V

„

…

†

25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

64nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

14.0

12.0

10.0

measured with thermocouple mounted to top (Drain) of part.

8.0

6.0

4.0

2.0

0.0

IRF6718L2TR1PbF

20nC

IRF6718L2TRPbF

= 25°C, L = 0.44mH, R

I D = 49A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

9.4nC

gs2

V DS = 20V

V DS = 13V

Max.

270

490

530

±20

DS(on)

67nC

100 120 140 160 180

= 25Ω, I

DirectFET™ ISOMETRIC

50nC

= 49A.

oss

packaging to

DS(on)

Units

1.9V

gs(th)

11/19/10

Related parts for IRF6718L2TR1PBF

IRF6718L2TR1PBF Summary of contents

Page 1

... Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com IRF6718L2TRPbF IRF6718L2TR1PbF V DSS 25V max ±20V max 0.50mΩ@10V 1.0mΩ@4. tot 64nC 20nC ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 10 1 0.1 1 ...

Page 5

175°C 100 25° -40° 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 Fig 16. Typical Avalanche Current vs.Pulsewidth 600 Single ...

Page 7

DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time Test ...

Page 8

D.U.T + ƒ • • - • + ‚ „ • G • • SD • Fig 19. ™ Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 8 Driver Gate Drive P.W. ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN MAX A 9.15 0.356 0.360 9.05 7.10 B 6.85 0.270 0.280 6.00 C 5.90 0.232 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF6718L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC MIN CODE MIN MAX 12.992 A 330.0 N.C B 20.2 0.795 ...

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