IXKP20N60C5 IXYS, IXKP20N60C5 Datasheet
IXKP20N60C5
Manufacturer Part Number
IXKP20N60C5
Description
MOSFET N-CH 600V 20A TO220AB
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKP20N60C5.pdf
(4 pages)
Specifications of IXKP20N60C5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1520pF @ 100V
Mounting Type
Through Hole
Package / Case
TO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.200
Ciss, Typ, (pf)
1520
Qg, Typ, (nc)
32
Trr, Max, (ns)
-
Trr, Typ, (ns)
340
Pd, (w)
208
Rthjc, Max, (k/w)
0.60
Visol, Rms, (v)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKP20N60C5
Manufacturer:
IXYS
Quantity:
24
Company:
Part Number:
IXKP20N60C5
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXKP20N60C5M
Manufacturer:
IXYS
Quantity:
18 000
CoolMOS
N-Channel Enhancement Mode
Low R
Ultra low gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
thJC
g
gs
gd
DSon
, High V
Conditions
T
T
T
single pulse
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 10 A; R
= 25°C
= 90°C
= 25°C
= 600 V; V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 10 V; V
GS
™ 1)
; I
DSS
D
DS
G
D
= 1.1 mA
DS
= 3.3 Ω
= 10 A
= 100 V
GS
DS
MOSFET
I
= 400 V
D
Power MOSFET
= 0 V
= 0 V
DS
= 6.6 A; T
= 400 V; I
T
T
C
VJ
VJ
= 25°C
D
DS
(T
= 25°C
= 125°C
= 10 A
= 0...480 V
VJ
= 25°C, unless otherwise specifi ed)
min.
2.5
Characteristic Values
1520
Maximum Ratings
typ.
180
10
72
32
11
10
50
3
8
5
5
G
max.
± 20
0.66
0.60
600
435
200
100
3.5
20
13
50
45
1
S
V/ns
D
K/W
mΩ
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
ns
ns
ns
ns
V
V
A
A
V
I
V
R
TO-247 AD (IXKH)
TO-220 AB (IXKP)
Features
• fast CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
D25
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
- Low thermal resistance
(SMPS)
DSS
DS(on) max
inductive switching (UIS)
due to reduced chip thickness
1)
CoolMOS
Infi neon Technologies AG.
G
D
G
S
D
S
IXKH 20N60C5
IXKP 20N60C5
= 20 A
= 600 V
= 0.2 Ω
™ 1)
™
is a trademark of
power MOSFET
20080523d
D(TAB)
1 - 4
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IXKP20N60C5 Summary of contents
Page 1
... 400 3.3 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G Maximum Ratings 600 ± 435 = 25°C C 0.66 = 0...480 Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. ...
Page 2
... M mounting torque d Symbol Conditions R with heatsink compound thCH Weight TO-247 TO-220 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. 10 0.9 1.2 ...
Page 3
... TO-247 AD Outline TO-220 AB Outline 250 200 150 100 120 T [°C] C Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Symbol min A 0.185 A1 0.087 A2 0.059 D 0.819 E 0.610 E2 0.170 e L 0.780 L1 ØP 0.140 Q 0 ...
Page 4
... SD Fig. 7 Forward characteristic of reverse diode 500 400 300 200 100 100 140 T [°C] j Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 0 0.5 0.4 0 typ 0.2 0.1 0 -60 - 100 ...