IRF7805Z International Rectifier, IRF7805Z Datasheet - Page 3

• Manufacturer Part Number: IRF7805Z
• Description: MOSFET N-CH 30V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7805Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2080pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7805Z

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1000
1000
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
100
10
10
1
1
0.01
2.5
T J = 150°C
V DS , Drain-to-Source Voltage (V)
T J = 25°C
V GS , Gate-to-Source Voltage (V)
0.1
3.0
3.5
1
20µs PULSE WIDTH
Tj = 25°C
V DS = 15V
20µs PULSE WIDTH
2.5V
10
4.0
100
4.5
1000
100
2.0
1.5
1.0
0.5
10
Fig 2. Typical Output Characteristics
1
0.01
-60 -40 -20
Fig 4. Normalized On-Resistance
I D = 16A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0.1
0
20
40
1
20µs PULSE WIDTH
Tj = 150°C
60
2.5V
80 100 120 140 160
10
3
100