IRF7805Z International Rectifier, IRF7805Z Datasheet - Page 4

MOSFET N-CH 30V 16A 8-SOIC

IRF7805Z

Manufacturer Part Number
IRF7805Z
Description
MOSFET N-CH 30V 16A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7805Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 4.5V
Input Capacitance (ciss) @ Vds
2080pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7805Z

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4
1000.0
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 150°C
0.4
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
Coss
Crss
Ciss
0.8
T J = 25°C
10
f = 1 MHZ
1.0
V GS = 0V
1.2
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
1.0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
VDS= 15V
10.0
20
www.irf.com
30
100µsec
1msec
10msec
100.0
40

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