IRF7805Z International Rectifier, IRF7805Z Datasheet - Page 6

• Manufacturer Part Number: IRF7805Z
• Description: MOSFET N-CH 30V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7805Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2080pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7805Z

6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
0.03
0.02
0.01
0.00
I
AS
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
D.U.T
t p
0.01 Ω
L
6.0
T J = 25°C
T J = 125°C
15V
V
(BR)DSS
DRIVER
8.0
I D = 16A
+
-
V DD
A
10.0
300
250
200
150
100
50
90%
V
0
10%
V
DS
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
25
GS
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
r
75
V
DS
t
100
d(off)
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D.U.T
TOP
BOTTOM
L
t
D
f
125
V
DD
+
6.9A
6.0A
-
12A
I D
150