IXTH16P20 IXYS, IXTH16P20 Datasheet
IXTH16P20
Manufacturer Part Number
IXTH16P20
Description
MOSFET P-CH 200V 16A TO-247
Manufacturer
IXYS
Datasheet
1.IXTH16P20.pdf
(2 pages)
Specifications of IXTH16P20
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 16 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-16
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
95
Trr, Typ, (ns)
180
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH16P20
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTH16P20
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2004 IXYS All rights reserved
P-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
Standard Power MOSFET
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
C
C
C
C
C
J
J
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= -10 V, I
GS
, I
D
D
DC
= -250 A
= -250 A
DSS
D
, V
= 0.5 • I
DS
= 0
GS
D25
= 1 M
T
T
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
J
-200
min.
-3.0
Characteristic Values
-55 ... +150
-55 ... +150
IXTH 16P20
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
-200
-200
300
150
300
-16
-64
-16
20
30
30
6
max.
0.16
-5.0
100
-25
-1
mA
mJ
nA
W
V
V
V
V
A
A
A
V
V
C
C
C
C
A
g
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
V
I
R
TO-247 AD
G = Gate,
S = Source,
D25
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= -200 V
= -16 A
= 0.16
HDMOS
D = Drain,
TAB = Drain
TM
DS98906B(1/04)
process
D (TAB)
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IXTH16P20 Summary of contents
Page 1
... GS(th GSS 0.8 • V DSS DS DSS - 0.5 • I DS(on © 2004 IXYS All rights reserved IXTH 16P20 Maximum Ratings -200 = 1 M -200 -16 -64 J -16 30 300 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values ( unless otherwise specified) J min. typ. max. -200 -3.0 -5 ...
Page 2
... Pulse test, t 300 s, duty cycle di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 2800 550 240 ...