IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet

MOSFET N-CH 75V 375A DIRECTFET

IRF7759L2TR1PBF

Manufacturer Part Number
IRF7759L2TR1PBF
Description
MOSFET N-CH 75V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7759L2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 96A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
12222pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7759L2TR1PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7759L2TR1PBF
Manufacturer:
MXIC
Quantity:
101
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Applicable DirectFET Outline and Substrate Outline 
Description
The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the lowest on-state resistance in a package that has a footprint smaller than a D
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
www.irf.com
V
V
I
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
D
DM
AR
Primary Switch Socket
DS
GS
AS
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
@ T
SB
C
C
A
C
= 25°C
= 25°C
= 100°C
= 25°C
8
6
4
2
0
Fig 1. Typical On-Resistance vs. Gate Voltage
2
SC
4
V GS, Gate -to -Source Voltage (V)
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
8
10
12
T J = 25°C
T J = 125°C
Ã
14
16
I D = 96A
Parameter
GS
GS
GS
GS
18
M2
@ 10V
@ 10V
@ 10V
@ 10V
h
20
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
M4
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
C
e
measured with thermocouple mounted to top (Drain) of part.
1.95
1.85
1.75
1.65
J
15
= 25°C, L = 0.056mH, R
2
Fig 2. Typical On-Resistance vs. Drain Current
D
PAK and only 0.7 mm profile. The DirectFET package
T A = 25°C
G
75V min
DirectFET™ Power MOSFET ‚
30
200nC
Q
L4
V
L8
S
S
S
S
g tot
DSS
IRF7759L2TR1PbF
I D , Drain Current (A)
IRF7759L2TRPbF
45
S
S
S
S
Max.
160
113
375
640
257
±20
75
26
96
±20V max
D
L6
62nC
60
G
V
Q
= 25Ω, I
GS
gd
V GS = 7.0V
V GS = 10V
V GS = 8.0V
V GS = 15V
DirectFET™ ISOMETRIC
75
AS
L8
1.8mΩ@ 10V
= 96A.
TM
90
R
V
3.0V
packaging to
DS(on)
gs(th)
Units
mJ
105
11/16/09
V
A
A
1

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IRF7759L2TR1PBF Summary of contents

Page 1

... T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.056mH IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 75V min ±20V max 1.8mΩ@ 10V tot gd gs(th) 200nC 62nC 3 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 100°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

TOP 100 BOTTOM 10 1 3.75V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 25V ≤60µs PULSE WIDTH 100 10 ...

Page 5

175° 25° -40°C 100 10 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 160 120 ...

Page 6

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 TOP Single ...

Page 7

DUT 20K Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS IMPERIAL METRIC MAX MIN CODE MIN MAX A 9.15 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7759L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN ...

Page 11

... Part number Package Type IRF7759L2TRPbF DirectFET2 Large Can IRF7759L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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