IRFP4232PBF International Rectifier, IRFP4232PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRFP4232PBF
Manufacturer Part Number
IRFP4232PBF
Description
MOSFET N-CH 250V 60A TO-247AC
Manufacturer
International Rectifier
Specifications of IRFP4232PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35.7 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7290pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Current, Drain
60 A
Gate Charge, Total
160 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
430 W
Resistance, Drain To Source On
30 Milliohms
Resistance, Thermal, Junction To Case
0.35 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Time, Turn-off Delay
64 ns
Time, Turn-on Delay
37 ns
Transconductance, Forward
95 S
Voltage, Breakdown, Drain To Source
250 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
35.7 m Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
60 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Features
l
l
l
l
l
l
l
l
Description
Notes through
are on page 8
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
175°C operating junction temperature for
D
D
DM
RP
dissipation in Sustain & ER applications
reliable operation
and reliability
improved ruggedness
Advanced process technology
Key parameters optimized for PDP Sustain &
Low E
Low Q
High repetitive peak current capability for
Short fall & rise times for fast switching
Repetitive avalanche capability for robustness
J
STG
Energy Recovery applications
GS
GS
D
D
θJC
@ T
@ T
@ T
@T
@T
(TRANSIENT)
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for fast response
MOSFET
®
rating to reduce the power
Power MOSFET
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
f
Parameter
Parameter
g
MOSFET
PDP MOSFET
GS
GS
PULSE
@ 10V
@ 10V
V
V
R
E
I
T
RP
J
DS
DS (Avalanche)
PULSE
DS(ON)
G
max
max @ T
min
typ.
typ. @ 10V
typ.
C
Typ.
= 100°C
–––
Key Parameters
10lb
S
D
-40 to + 175
IRFP4232PbF
x
in (1.1N
Max.
240
117
430
210
300
±20
±30
2.9
60
42
x
m)
MOSFET
Max.
0.35
250
300
310
117
175
30
TO-247AC
Units
Units
W/°C
°C/W
°C
W
V
A
N
09/14/07
m
°C
µJ
V
V
A
1
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IRFP4232PBF Summary of contents
... PDP MOSFET V min (Avalanche) R typ. @ 10V DS(ON) E typ. PULSE I max @ max J G MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f IRFP4232PbF Key Parameters 250 typ. 300 m 30 310 = 100°C 117 C 175 D TO-247AC S MOSFET Max. Units ±20 V ± 240 117 430 W 210 2.9 W/° ...
... IRFP4232PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...
... V DS, Drain-to -Source Voltage (V) Fig 5. Typical E vs. Drain-to-Source Voltage PULSE www.irf.com 100 8.0 Fig 4. Normalized On-Resistance vs. Temperature 1000 190 200 Fig 6. Typical E IRFP4232PbF 1000 VGS TOP 15V 10V 8.0V BOTTOM 7.0V 100 10 ≤ 60µs PULSE WIDTH Tj = 175°C 1 0.1 ...
... IRFP4232PbF 1600 L = 220nH 1400 C= 0.4µF 1200 C= 0.3µF C= 0.2µF 1000 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 12000 0V MHZ C iss = SHORTED 10000 C rss = oss = 8000 Ciss 6000 4000 2000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage ...
... J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFP4232PbF 1000 TOP 800 BOTTOM 600 400 200 100 125 Starting Junction Temperature (°C) 200 ton= 1µs Duty cycle = 0.25 Half Sine Wave 160 Square Pulse ...
... IRFP4232PbF D.U.T + • • - • + - R • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT 0 1K Fig 20a. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current ...
... Fig 21a. t and E Test Circuit st PULSE Fig 21c D.U. ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com Fig 21b. t Test Waveforms PULSE d(on) Fig 22b. Switching Time Waveforms IRFP4232PbF Test Waveforms d(off ...
... IRFP4232PbF TO-247AC package is not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 0.25mH 25Ω 42A Pulse width ≤ 400µs; duty cycle ≤ 2%. approximately 90° measured at θ J
...
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