IRFB4410ZGPBF International Rectifier, IRFB4410ZGPBF Datasheet
IRFB4410ZGPBF
Specifications of IRFB4410ZGPBF
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IRFB4410ZGPBF Summary of contents
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... Limited à Parameter i IRFB4410ZGPbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited TO-220AB IRFB4410ZGPbF G D Drain Max 390 230 1.5 ± - 175 300 x x 10lbf in (1.1N m) 242 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...
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175° 25°C 1 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 100 ...
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D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ ...
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150µA 2 250µ 1.0mA 1 1.0A 1.0 -75 -50 - 100 125 150 175 200 Temperature ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit Second Pulse ...
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TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for ...