STP3NK100Z STMicroelectronics, STP3NK100Z Datasheet

MOSFET N-CH 1000V 2.5A TO-220

STP3NK100Z

Manufacturer Part Number
STP3NK100Z
Description
MOSFET N-CH 1000V 2.5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP3NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
601pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
12.5A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
5.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
6 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7524-5
STP3NK100Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3NK100Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP3NK100Z
Manufacturer:
ST
0
Part Number:
STP3NK100Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP3NK100Z
Quantity:
9 050
Features
Application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1.
October 2007
STF3NK100Z
STP3NK100Z
STD3NK100Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching applications
Type
STP3NK100Z
STD3NK100Z
STF3NK100Z
Order codes
N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK
Device summary
1000V
1000V
1000V
V
DSS
R
< 6Ω
< 6Ω
< 6Ω
Max
DS(on)
Zener-protected SuperMESH™ Power MOSFET
P3NK100Z
D3NK100Z
F3NK100Z
Marking
2.5A
2.5A
2.5A
I
D
P
25W
90W
90W
TOT
STF3NK100Z - STD3NK100Z
Rev 2
Figure 1.
TO-220FP
Package
TO-220
DPAK
TO-220
Internal schematic diagram
1
2
3
DPAK
STP3NK100Z
1
3
Packaging
Tape & reel
TO-220FP
Tube
Tube
1
www.st.com
2
3
1/16
16

Related parts for STP3NK100Z

STP3NK100Z Summary of contents

Page 1

... Order codes STF3NK100Z STP3NK100Z STD3NK100Z October 2007 STF3NK100Z - STD3NK100Z TOT 2.5A 25W 2.5A 90W TO-220 2.5A 90W Figure 1. Marking Package F3NK100Z TO-220FP P3NK100Z TO-220 D3NK100Z DPAK Rev 2 STP3NK100Z TO-220FP 3 1 DPAK Internal schematic diagram Packaging Tube Tube Tape & reel www.st.com 3 1/16 16 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STF3NK100Z - STP3NK100Z - STD3NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

... STF3NK100Z - STP3NK100Z - STD3NK100Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) Drain current (pulsed Total dissipation at T TOT Derating factor V Gate source ESD (HBM-C=100pF, R=1.5KΩ) ESD(G-S) (3) Peak diode recovery voltage slope ...

Page 4

... Total gate charge g Q Gate-source charge gs Gate-drain charge Pulsed: pulse duration = 300µs, duty cycle 1. defined as constant equivalent capacitance giving the same charging time as C oss eq. increases from 0 to 80% V 4/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Parameter Test conditions I = 1mA Max rating Max rating,Tc=125° ± ...

Page 5

... STF3NK100Z - STP3NK100Z - STD3NK100Z Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time r Table 8. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/ DPAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics 6/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 3. Thermal impedance for TO-220/ DPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics ...

Page 7

... STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 8. Normalized BV DSS Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature vs. temperature Figure 9. Figure 13. Normalized on resistance vs. Electrical characteristics Static drain-source on resistance temperature 7/16 ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Figure 15. Maximum avalanche energy vs Tj ...

Page 9

... STF3NK100Z - STP3NK100Z - STD3NK100Z 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit Figure 19. Unclamped inductive load test circuit Figure 21. Switching time waveform ...

Page 10

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/16 STF3NK100Z - STP3NK100Z - STD3NK100Z www.st.com ...

Page 11

... STF3NK100Z - STP3NK100Z - STD3NK100Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 12

... Package mechanical data DIM Ø 12/16 STF3NK100Z - STP3NK100Z - STD3NK100Z TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 1.7 1.15 1.7 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16 ...

Page 13

... STF3NK100Z - STP3NK100Z - STD3NK100Z DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 5.4 0.45 0.6 0.48 0.6 6 6.2 5.1 6.4 6.6 4.7 2.28 4.4 4.6 9.35 10.1 1 2.8 0.8 0.6 1 0.2 0° 8° Package mechanical data inch MIN ...

Page 14

... P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2 15.7 16.3 14/16 STF3NK100Z - STP3NK100Z - STD3NK100Z TAPE AND REEL SHIPMENT inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 ...

Page 15

... STF3NK100Z - STP3NK100Z - STD3NK100Z 6 Revision history Table 10. Document revision history Date 17-May-2007 18-Oct-2007 Revision 1 First release 2 Added DPAK Revision history Changes 15/16 ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 STF3NK100Z - STP3NK100Z - STD3NK100Z Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...

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