IRF3415PBF International Rectifier, IRF3415PBF Datasheet - Page 8

• Manufacturer Part Number: IRF3415PBF
• Description: MOSFET N-CH 150V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 43 A
• Gate Charge, Total: 200 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.042 Ohm
• Resistance, Thermal, Junction To Case: 0.75 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 71 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 43 A
• Mounting Style: Through Hole
• Gate Charge Qg: 133.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3415PBF

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Dimensions are shown in millimeters (inches)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPL E :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
Note: "P" in assembly line
position indicates "Lead-Free"
T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB LY L INE "C"
10.54 (.415)
10.29 (.405)
1
2
3
4
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
Visit us at www.irf.com for sales contact information.01/04
M
Data and specifications subject to change without notice.
- A -
B A M
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
R E CT IF IE R
AS S E MB L Y
LOT CODE
L OGO
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
TAC Fax: [phone]
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR