IRFP260MPBF International Rectifier, IRFP260MPBF Datasheet

MOSFET N-CH 200V 49A TO-247AC

IRFP260MPBF

Manufacturer Part Number
IRFP260MPBF
Description
MOSFET N-CH 200V 49A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP260MPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
234nC @ 10V
Input Capacitance (ciss) @ Vds
4057pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
156 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP260MPBF
Manufacturer:
INFINEON
Quantity:
20 000
Part Number:
IRFP260MPBF
0
Company:
Part Number:
IRFP260MPBF
Quantity:
4 000
www.irf.com
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Description
l
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
IRFP260MPbF
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
D
S
Max.
200
300
560
2.0
±20
50
35
50
30
10
®
R
Power MOSFET
V
DS(on)
Max.
0.50
TO-247AC
–––
40
DSS
I
D
= 50A
= 200V
= 0.04Ω
PD - 96293
03/01/10
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRFP260MPBF Summary of contents

Page 1

... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFP260MPbF G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 96293 ® HEXFET Power MOSFET ...

Page 2

... IRFP260MPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRFP260MPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 50A V = 10V ...

Page 4

... IRFP260MPbF 8000 0V MHZ C iss = SHORTED 7000 C rss = oss = 6000 Ciss 5000 4000 Coss 3000 2000 Crss 1000 Drain-to-Source Voltage (V) 1000 100 T = 175 C ° ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage ( 100 1000 1000 OPERATION IN THIS AREA LIMITED 100 175 Single Pulse 1 1 ...

Page 5

... SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP260MPbF + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes: 1. Duty factor Peak ...

Page 6

... IRFP260MPbF D.U 20V 0.01 Ω Charge 6 1500 15V DRIVER 1000 + 500 V (BR)DSS 0 25 Starting T , Junction Temperature ( C) 12V I D TOP 11A 20A BOTTOM 28A 50 75 100 125 150 J Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µF + D.U. 3mA Current Sampling Resistors www ...

Page 7

... P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFP260MPbF + - V =10V ...

Page 8

... IRFP260MPbF @ @  T@@ WD@XÃÅ7Å ‘ÃÃi "‘ÃÃi ‘à à 7 à ‘ G@69ÃUDQ ‘ÃQ à à 7 6à D@X)ÃÅ7Å UC@SH6GÃQ6 QG6UDIB @ p à à 7 6à D@X)ÃÅ6ÅÃÃÅ6Å ...

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