IXFH52N30P IXYS, IXFH52N30P Datasheet

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IXFH52N30P

Manufacturer Part Number
IXFH52N30P
Description
MOSFET N-CH 300V 52A TO-247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFH52N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
52
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH52N30P
Manufacturer:
IXYS
Quantity:
10 000
PolarHT
MOSFET HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS220)
PLUS220 & PLUS220SMD
TO-247
Test Conditions
V
V
V
V
V
V
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
Power
DM
, V
GS
DSS
, I
D
DD
D
D
= 250μA
= 4mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFV52N30P
IXFV52N30PS
IXFH52N30P
11..65/2.5..14.6
300
2.5
-55 ... +150
-55 ... +150
Min.
Characteristic Values
Maximum Ratings
1.13/10
± 20
± 30
300
300
150
400
150
300
260
Typ.
52
52
10
1
4
6
± 100
Max.
Nm/lb.in.
5.0
25
66 mΩ
1
N/lb.
V/ns
mA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
V
J
g
V
I
R
t
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
D25
rr
International standard packages
Fast recovery diode
Avalanche rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
= 300V
= 52A
≤ ≤ ≤ ≤ ≤ 66mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
S
S
D
TAB = Drain
= Drain
D (TAB)
D (TAB)
D (TAB)
DS99197F(05/08)

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IXFH52N30P Summary of contents

Page 1

... D = ± 20V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFV52N30P IXFV52N30PS IXFH52N30P Maximum Ratings 300 = 1MΩ 300 GS ± 20 ± 150 ≤ 150° 400 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14 Characteristic Values Min. ...

Page 2

... I 25 DSS D D25 53 0.25 Characteristic Values Min. Typ. JM 160 800 7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH52N30P IXFV52N30P IXFV52N30PS PLUS220 (IXFV) Outline Max 0.31 °C/W °C/W Max 150 A 1.5 V TO-247 (IXFH) Outline 200 ns nC ...

Page 3

... IXYS CORPORATION, All rights reserved 3.0 3.5 4.0 4.5 5 Volts = 26A Value 125º 25ºC J 100 125 150 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 2. Extended Output Characteristics @ 25ºC 150 V = 10V GS 9V 125 100 Volts D S Fig Normalized to I DS(on) vs. Junction Temperature 3 ...

Page 4

... S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions. 6.5 7.0 7.5 8 25ºC J 1.1 1.2 1.3 1.4 C iss C oss C rss Volts IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 150V 26A D ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 10 Pulse Width - milliseconds IXFH52N30P IXFV52N30P IXFV52N30PS 100 IXYS REF: T_52N30P(6S)3-14-06-C 1000 ...

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