IRFB3306PBF International Rectifier, IRFB3306PBF Datasheet

MOSFET N-CH 60V 120A TO-220AB

IRFB3306PBF

Manufacturer Part Number
IRFB3306PBF
Description
MOSFET N-CH 60V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB3306PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4520pF @ 50V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
230 W
Mounting Style
Through Hole
Gate Charge Qg
85 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB3306PBF
Manufacturer:
OMRON
Quantity:
12 000
Part Number:
IRFB3306PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFB3306PBF
0
Company:
Part Number:
IRFB3306PBF
Quantity:
2 000
Company:
Part Number:
IRFB3306PBF
Quantity:
41 000
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D
Parameter
Parameter
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
2
Pak jk
G
D
IRFB3306PbF
TO-220AB
G ate
G
G
D
D
S
S
See Fig. 14, 15, 22a, 22b,
Typ.
0.50
–––
–––
–––
V
R
I
I
D
D
DSS
10lbxin (1.1Nxm)
DS(on)
(Silicon Limited)
(Package Limited)
-55 to + 175
D
IRFS3306PbF
Drain
160c
110c
HEXFET Power MOSFET
Max.
120
620
230
± 20
300
184
D
D
1.5
14
2
Pak
G
IRFSL3306PbF
typ.
D
max.
IRFB3306PbF
IRFS3306PbF
S
Max.
0.65
–––
62
40
D
IRFSL3306PbF
Source
160A c
3.3m :
4.2m :
TO-262
120A
S
60V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
G
D
4/7/08
S
1

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IRFB3306PBF Summary of contents

Page 1

... Junction-to-Ambient, TO-220 k θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G D TO-220AB IRFB3306PbF G G ate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter 2 Pak jk IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max. I 160A c (Silicon Limited (Package Limited ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175° 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 Limited ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - F ree" TO-220AB packages ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L www.irf.com (Dimensions are shown in millimeters (inches)) LOT CODE 1789 INT ERNAT IONAL AS S EMBLED ON WW 19, 1997 RECT IFIER ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" T HIS IS AN IRF530S WIT H LOT CODE 8024 For GB Production ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

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