STP80NF55L-06 STMicroelectronics, STP80NF55L-06 Datasheet

MOSFET N-CH 55V 80A TO-220

STP80NF55L-06

Manufacturer Part Number
STP80NF55L-06
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP80NF55L-06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
136nC @ 5V
Input Capacitance (ciss) @ Vds
4850pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0065 Ohms
Forward Transconductance Gfs (max / Min)
150 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5898-5
STP80NF55L-06

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Part Number:
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Manufacturer:
ST
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Part Number:
STP80NF55L-06FP
Manufacturer:
ST
0
Part Number:
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Manufacturer:
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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(#
( )
January 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 @ B80NF55L-06 @
STB80NF55L-06
STP80NF55L-06
TYPICAL R
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE
Pulse width limited safe operating area
Symbol
Current limited by the package
dv/dt
E
I
V
I
DM
V
V
P
AS (2)
T
D
DGR
I
T
GS
stg
DS
(#)
TYPE
D
tot
(
j
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.005
V
55 V
55 V
DSS
N-CHANNEL 55V - 0.005
Parameter
< 0.0065
< 0.0065
2
PAK (TO-263)
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
80 A
80 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
80A, di/dt 400A/µs, V
(Suffix “T4”)
j
TO-263
= 25
D
2
PAK
-55 to 175
o
Value
- 80A D²PAK/TO-220
STB80NF55L-06
C, I
STP80NF55L-06
± 16
320
300
1.3
55
55
80
80
1
2
7
D
= 40A, V
3
DD
DD
V
(BR)DSS
= 35V
TO-220
, T
j
T
JMAX
1
2
W/°C
V/ns
Unit
3
°C
W
V
V
V
A
A
A
J
1/10

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STP80NF55L-06 Summary of contents

Page 1

... NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 @ B80NF55L-06 @ STripFET™ II POWER MOSFET R I DS(on INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25° (2) Starting T STB80NF55L-06 STP80NF55L-06 - 80A D²PAK/TO-220 PAK TO-220 TO-263 (Suffix “T4”) Value 55 55 ± 320 300 2 7 1.3 -55 to 175 80A, di/dt 400A/µs, V ...

Page 2

... STB80NF55L-06 STP80NF55L-06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... STB80NF55L-06 STP80NF55L-06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge g Q Gate-Source Charge gs Gate-Drain Charge Q gd SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall Time t f SOURCE DRAIN DIODE Symbol Parameter I Source-drain Current ...

Page 4

... STB80NF55L-06 STP80NF55L-06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/10 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... STB80NF55L-06 STP80NF55L-06 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature 5/10 ...

Page 6

... STB80NF55L-06 STP80NF55L-06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STB80NF55L-06 STP80NF55L-06 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0° PAK MECHANICAL DATA mm. TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 8.5 5 ...

Page 8

... STB80NF55L-06 STP80NF55L-06 DIM. MIN. A 4.4 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4. 2.65 L6 15.25 L7 6.20 L9 3.50 DIA 3.75 8/10 TO-220 MECHANICAL DATA mm. TYP. MAX. 4.6 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2 ...

Page 9

... STB80NF55L-06 STP80NF55L- PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 ...

Page 10

... STB80NF55L-06 STP80NF55L-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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