IRFB4233PBF International Rectifier, IRFB4233PBF Datasheet

MOSFET N-CH 230V 56A TO-220AB

IRFB4233PBF

Manufacturer Part Number
IRFB4233PBF
Description
MOSFET N-CH 230V 56A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4233PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
37 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
230V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5510pF @ 25V
Power - Max
370W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
37 m Ohms
Drain-source Breakdown Voltage
230 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
56 A
Power Dissipation
370 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4233PBF
Manufacturer:
IR
Quantity:
12 500
Features
l
l
l
l
l
l
l
l
Description
Notes  through † are on page 8
www.irf.com
Absolute Maximum Ratings
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
R
R
175°C operating junction temperature for
D
D
DM
RP
Energy Recovery and Pass Switch Applications
in PDP Sustain, Energy Recovery and Pass
Switch Applications
reliable operation
and reliability
improved ruggedness
Advanced process technology
Key parameters optimized for PDP Sustain,
Low E
Low Q
High repetitive peak current capability for
Short fall & rise times for fast switching
Repetitive avalanche capability for robustness
J
STG
GS
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@T
@T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for fast response
MOSFET
®
rating to reduce power dissipation
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Parameter
Parameter
f
g
MOSFET
GS
GS
PULSE
PDP SWITCH
@ 10V
@ 10V
V
V
R
I
T
RP
J
DS
DS (Avalanche)
DS(ON)
G
max
max @ T
min
typ. @ 10V
typ.
C
Typ.
0.50
–––
–––
= 100°C
Key Parameters
10lb
S
D
-40 to + 175
IRFB4233PbF
x
in (1.1N
Max.
220
114
370
190
300
±30
2.5
56
39
x
m)
MOSFET
0.402
Max.
–––
62
230
276
114
175
31
TO-220AB
Units
Units
W/°C
°C/W
°C
W
V
A
N
m
°C
09/14/07
V
V
A
1

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IRFB4233PBF Summary of contents

Page 1

... PDP SWITCH V min (Avalanche) R typ. @ 10V DS(ON) I max @ max J G MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4233PbF Key Parameters 230 typ. 276 100°C 114 C 175 D S TO-220AB MOSFET Max. Units ± 220 114 370 W 190 2.5 W/°C - 175 ° ...

Page 2

... IRFB4233PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... Fig 5. Typical E vs. Drain-to-Source Voltage PULSE www.irf.com 100 8.0 9.0 Fig 4. Normalized On-Resistance vs. Temperature 1000 800 600 400 200 180 190 Fig 6. Typical E IRFB4233PbF 1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 5.5V BOTTOM 5.3V 10 5.3V ≤ 60µs PULSE WIDTH Tj = 175° ...

Page 4

... IRFB4233PbF 1200 L = 220nH 1000 C= 0.4µF C= 0.3µF C= 0.2µF 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 10000 0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = 6000 Ciss 4000 2000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage ...

Page 5

... Fig 14. Maximum Avalanche Energy Vs. Temperature τ J τ J τ 1 τ 1 Ci= τi/Ri Ci i/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFB4233PbF TOP BOTTOM 800 600 400 200 100 125 Starting Junction Temperature (°C) 180 ton= 1µs 160 Duty cycle = 0.25 Half Sine Wave ...

Page 6

... IRFB4233PbF D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT 0 1K Fig 20a. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 7

... Fig 21a. t and E Test Circuit st PULSE D.U. ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com Fig 21c. E Test Waveforms PULSE Fig 22b. Switching Time Waveforms IRFB4233PbF Fig 21b. t Test Waveforms d(on) r d(off ...

Page 8

... IRFB4233PbF UCDTÃDTÃ6I ÃDSA  Ã GPUÃ8 P9 Ã &'( 6TT 9ÃP I ÃX X Ã (Ã ((& DIÃUC Ã6TT H 7G`ÃGDI ÃÅ8Å No te: "P" in assem bly line position indicates "Lead-F ree" TO-220AB packages are not recommended for Surface Mount Application. ...

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