STP9NK90Z STMicroelectronics, STP9NK90Z Datasheet - Page 9

MOSFET N-CH 900V 8A TO-220

STP9NK90Z

Manufacturer Part Number
STP9NK90Z
Description
MOSFET N-CH 900V 8A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Type
Power MOSFETr
Datasheet

Specifications of STP9NK90Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.3 Ohm @ 3.6A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
2115pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.3 Ohm @ 10 V
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1.3Ohm
Drain-source On-volt
900V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2785-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP9NK90Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP9NK90Z
Manufacturer:
ST
0
Part Number:
STP9NK90Z
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP9NK90ZFP
Manufacturer:
ST
0
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
µF
Doc ID 9479 Rev 7
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Gate charge test circuit
Figure 22. Unclamped Inductive load test
Figure 24. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
Test circuits
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/17
G
DD
DD

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