STP5NK100Z STMicroelectronics, STP5NK100Z Datasheet

MOSFET N-CH 1KV 3.5A TO-220

STP5NK100Z

Manufacturer Part Number
STP5NK100Z
Description
MOSFET N-CH 1KV 3.5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheets

Specifications of STP5NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 Ohm @ 1.75A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1154pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.5 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
3.7ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4382-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP5NK100Z
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP5NK100Z
Manufacturer:
STMicroelectronics
Quantity:
180
Part Number:
STP5NK100Z
Manufacturer:
ST
0
Part Number:
STP5NK100Z
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP5NK100Z,P5NK100Z
Manufacturer:
ST
0
Features
Applications
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Table 1.
May 2009
STW5NK100Z
STP5NK100Z
STF5NK100Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Switching application
Type
STW5NK100Z
STP5NK100Z
STF5NK100Z
Order code
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247
Device summary
(@T
1000 V
1000 V
1000 V
V
DSS
JMAX
)
R
DS(on)
< 3.7 Ω
< 3.7 Ω
< 3.7 Ω
W5NK100Z
P5NK100Z
F5NK100Z
Marking
max
3.5 A
3.5 A
3.5 A
Doc ID 10850 Rev 5
I
D
STP5NK100Z, STF5NK100Z
SuperMESH3™ Power MOSFET
Figure 1.
TO-220FP
Package
TO-220
TO-247
TO-220
G(1)
Internal schematic diagram
STW5NK100Z
TO-247
D(2)
S(3)
1
2
3
TO-220FP
Packaging
Tube
Tube
Tube
1
2
www.st.com
3
AM01476v1
1/15
15

Related parts for STP5NK100Z

STP5NK100Z Summary of contents

Page 1

... MOSFETs, which includes the revolutionary MDmesh™ products. Table 1. Device summary Order code STF5NK100Z STP5NK100Z STW5NK100Z May 2009 STP5NK100Z, STF5NK100Z SuperMESH3™ Power MOSFET max I DS(on) D < 3.7 Ω 3.5 A < 3.7 Ω 3.5 A < ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP5NK100Z, STF5NK100Z, STW5NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 10850 Rev ...

Page 3

... STP5NK100Z, STF5NK100Z, STW5NK100Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor Gate source ESD V ESD(G-S) (HBM-C=100pF, R=1.5 kΩ) (3) dv/dt Peak diode recovery voltage slope ...

Page 4

... Total gate charge g Q Gate-source charge gs Q Gate-drain charge gd 1. Pulsed: pulse duration=300 µs, duty cycle 1. defined as a constant equivalent capacitance giving the same charging time as C oss eq. increases from 0 to 80% V 4/15 STP5NK100Z, STF5NK100Z, STW5NK100Z Parameter Test conditions mA Max rating Max rating 125 ° ...

Page 5

... STP5NK100Z, STF5NK100Z, STW5NK100Z Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 4. Safe operating area for TO-220 Figure 6. Safe operating area for TO-247 6/15 STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 3. Thermal impedance for TO-220FP Figure 5. Thermal impedance for TO-220 Figure 7. Thermal impedance for TO-247 Doc ID 10850 Rev 5 ...

Page 7

... STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Doc ID 10850 Rev 5 Electrical characteristics 7/15 ...

Page 8

... Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 18. Maximum avalanche energy vs temperature 8/15 STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 15. Normalized on resistance vs temperature Figure 17. Normalized BVdss vs temperature Doc ID 10850 Rev 5 ...

Page 9

... STP5NK100Z, STF5NK100Z, STW5NK100Z 3 Test circuits Figure 19. Unclamped inductive load test circuit Figure 21. Switching times test circuit for resistive load Figure 23. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Figure 22. Gate charge test circuit Doc ID 10850 Rev 5 ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STP5NK100Z, STF5NK100Z, STW5NK100Z Doc ID 10850 Rev 5 ® ...

Page 11

... STP5NK100Z, STF5NK100Z, STW5NK100Z Dim TO-220FP mechanical data Dia Doc ID 10850 Rev 5 Package mechanical data 7012510_Rev_J G 11/15 ...

Page 12

... Package mechanical data Dim L20 L30 ∅P Q 12/15 STP5NK100Z, STF5NK100Z, STW5NK100Z TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28 ...

Page 13

... STP5NK100Z, STF5NK100Z, STW5NK100Z Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 10850 Rev 5 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14 ...

Page 14

... Revision history 5 Revision history Table 9. Document revision history Date 12-Oct-2004 08-Sep-2005 16-Dec-2005 16-Aug-2006 15-May-2009 14/15 STP5NK100Z, STF5NK100Z, STW5NK100Z Revision 1 First release 2 Complete datasheet 3 Inserted ecopack indication 4 New template, no content change 5 Modified: Section 2.1: Electrical characteristics (curves) Doc ID 10850 Rev 5 Changes ...

Page 15

... STP5NK100Z, STF5NK100Z, STW5NK100Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords