IRF1404PBF International Rectifier, IRF1404PBF Datasheet
IRF1404PBF
Specifications of IRF1404PBF
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IRF1404PBF Summary of contents
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... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRF1404PbF HEXFET TO-220AB Max. @ 10V 202† 10V 143† GS See Fig.12a, 12b, 15 175 - 175 300 (1.6mm from case ) 10 lbf• ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...
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0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = Ciss 6000 4000 Coss 2000 ...
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LIMITED BY PACKAGE 200 180 160 140 120 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 ...
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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...
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Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 TOP Single Pulse BOTTOM 10% Duty Cycle 350 121A 300 250 200 150 100 50 0 ...
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Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 17. For N-channel 8 + • • ƒ • - „ • • • ...
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EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 2000 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" Notes: 1. For an Automotive ...