IRFB4610PBF International Rectifier, IRFB4610PBF Datasheet

MOSFET N-CH 100V 73A TO-220AB

IRFB4610PBF

Manufacturer Part Number
IRFB4610PBF
Description
MOSFET N-CH 100V 73A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4610PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
3550pF @ 50V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
73 A
Power Dissipation
190 W
Mounting Style
Through Hole
Gate Charge Qg
90 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4610PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4610PBF
Manufacturer:
IR
Quantity:
12 000
Part Number:
IRFB4610PBF
Manufacturer:
MITSUBISHI
Quantity:
4 000
Part Number:
IRFB4610PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRFB4610PBF
Quantity:
2 600
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dV/dt
T
T
E
I
E
R
R
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
@ T
@ T
JC
CS
JA
JA
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D
j
Parameter
Parameter
Ù
e
GS
GS
j
@ 10V
@ 10V
d
2
Pak
ij
G
IRFB4610PbF
TO-220AB
G
D
S
D
S
See Fig. 14, 15, 16a, 16b,
Typ.
0.50
–––
–––
–––
V
R
I
D
DSS
10lb
DS(on)
-55 to + 175
IRFS4610PbF
x
in (1.1N
Max.
HEXFET Power MOSFET
290
190
± 20
300
370
1.3
7.6
73
52
D
G D
2
Pak
typ.
IRFSL4610PbF
max.
S
x
m)
IRFB4610PbF
IRFS4610PbF
Max.
0.77
–––
62
40
IRFSL4610PbF
11m
14m
100V
73A
TO-262
G
Units
Units
D
W/°C
°C/W
V/ns
S
mJ
mJ
°C
W
A
V
A
09/16/10
1

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IRFB4610PBF Summary of contents

Page 1

... Junction-to-Case JC R Case-to-Sink, Flat Greased Surface , TO-220 CS R Junction-to-Ambient, TO-220 JA R Junction-to-Ambient (PCB Mount www.irf.com G TO-220AB IRFB4610PbF Parameter @ 10V GS @ 10V Ù Parameter Pak IRFB4610PbF IRFS4610PbF IRFSL4610PbF HEXFET Power MOSFET V 100V D DSS 11m R typ. DS(on) 14m max Pak IRFS4610PbF IRFSL4610PbF Max. 73 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 ...

Page 4

175°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 1 Allowed avalanche Current vs ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 900 1000 di ...

Page 7

D.U.T + ƒ ‚ -  SD Fig 21 D.U 20V Fig 22a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" in ass embly line position indicates "Lead - Free" TO-220AB packages are not recommended ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" OR Notes: 1. For an Automotive Qualified ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

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