MOSFET N-CH 250V 46A TO-220AB

IRFB4229PBF

Manufacturer Part NumberIRFB4229PBF
DescriptionMOSFET N-CH 250V 46A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
TypePower MOSFET
IRFB4229PBF datasheet
 

Specifications of IRFB4229PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs46 mOhm @ 26A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C46AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs110nC @ 10VInput Capacitance (ciss) @ Vds4560pF @ 25V
Power - Max330WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id46ADrain Source Voltage Vds250V
On Resistance Rds(on)38mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ5VRohs CompliantYes
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.046Ohm
Drain-source On-volt250VGate-source Voltage (max)±30V
Continuous Drain Current46APower Dissipation330W
Operating Temp Range-40C to 175COperating Temperature ClassificationAutomotive
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage30 VMounting StyleThrough Hole
Gate Charge Qg72 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
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Features
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
l
Energy Recovery and Pass Switch Applications
Low E
Rating to Reduce Power
l
PULSE
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low Q
for Fast Response
l
G
High Repetitive Peak Current Capability for
l
Reliable Operation
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
l
Improved Ruggedness
Repetitive Avalanche Capability for Robustness
l
and Reliability
Class-D Audio Amplifier 300W-500W
l
(Half-bridge)
Description
®
HEXFET
Power MOSFET
MOSFET
Absolute Maximum Ratings
V
Gate-to-Source Voltage
GS
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
I
@ T
= 100°C
Repetitive Peak Current
RP
C
P
@T
= 25°C
Power Dissipation
D
C
P
@T
= 100°C
Power Dissipation
D
C
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Junction-to-Case
R
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
Junction-to-Ambient
R
θJA
Notes  through … are on page 8
www.irf.com
V
min
DS
V
typ.
DS (Avalanche)
R
typ. @ 10V
DS(ON)
I
max @ T
RP
C
T
max
J
G
G
Gate
MOSFET
PULSE
Parameter
@ 10V
GS
@ 10V
GS
g
Parameter
f
f
IRFB4229PbF
Key Parameters
250
V
300
V
m
38
= 100°C
91
A
175
°C
D
D
G
S
TO-220AB
D
S
Drain
Source
MOSFET
Max.
Units
±30
V
46
A
33
180
91
330
W
190
2.2
W/°C
-40 to + 175
°C
300
x
x
10lb
in (1.1N
m)
N
Typ.
Max.
Units
–––
0.45
0.50
–––
°C/W
–––
62
09/10/07
S
D
1

IRFB4229PBF Summary of contents

  • Page 1

    ... Notes  through … are on page 8 www.irf.com V min DS V typ. DS (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4229PbF Key Parameters 250 V 300 100° 175 ° TO-220AB D S Drain Source MOSFET Max. Units ± 180 91 ...

  • Page 2

    Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

  • Page 3

    VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

  • Page 4

    L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...

  • Page 5

    125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...

  • Page 6

    D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit L ...

  • Page 7

    A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...

  • Page 8

    TO-220AB packages are not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.37mH 25Ω ƒ Pulse width ≤ 400µs; duty ...