IRFB4229PBF International Rectifier, IRFB4229PBF Datasheet
IRFB4229PBF
Specifications of IRFB4229PBF
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IRFB4229PBF Summary of contents
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... Notes through … are on page 8 www.irf.com V min DS V typ. DS (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4229PbF Key Parameters 250 V 300 100° 175 ° TO-220AB D S Drain Source MOSFET Max. Units ± 180 91 ...
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Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...
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VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...
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L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...
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125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...
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D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit L ...
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A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...
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TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.37mH 25Ω ƒ Pulse width ≤ 400µs; duty ...