IXTP160N10T IXYS, IXTP160N10T Datasheet

MOSFET N-CH 100V 160A TO-220

IXTP160N10T

Manufacturer Part Number
IXTP160N10T
Description
MOSFET N-CH 100V 160A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Type
Power MOSFETr
Datasheet

Specifications of IXTP160N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
132nC @ 10V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
160 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.007Ohm
Drain-source On-volt
100V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
132
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
AS
J
JM
stg
SOLD
DSS
DGR
GSM
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
GS
, di/dt ≤ 100 A/μs, V
TM
DSS
, I
D
D
= 250 μA
D
= 250 μA
= 25 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
GS
= 1 MΩ
DD
T
≤ V
J
Preliminary Technical Information
= 150°C
DSS
IXTA160N10T
IXTP160N10T
JM
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
6.1
± 30
100
100
160
430
500
430
175
300
260
2.5
75
25
± 200
3
3
250
Max.
4.5
7.0
5
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
TO-263 (IXTA)
Electronic Valve Train Systems
V
I
R
High Current Switching
High Voltage Synchronous Recifier
Distributed Power Architechtures
D25
TO-220 (IXTP)
Systems
Applications
G = Gate
S = Source
DSS
DS(on)
and VRMs
G
G
D
S
= 100
= 160
S
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
7.0 mΩ Ω Ω Ω Ω
(TAB)
DS99650 (11/06)
(TAB)
A
V

Related parts for IXTP160N10T

IXTP160N10T Summary of contents

Page 1

... GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA160N10T IXTP160N10T Maximum Ratings 100 = 1 MΩ 100 GS ± 30 160 75 430 JM 25 500 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ. Max Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA160N10T IXTP160N10T TO-263 (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter nC Min. Max. Min. A 4.06 4.83 ...

Page 3

... Value D 140 120 T = 175ºC J 100 25º -50 200 250 300 IXTA160N10T IXTP160N10T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 160A Value DS(on) D vs. Junction Temperature V = 10V 160A D - 100 T - Degrees Centigrade J Fig ...

Page 4

... 1.1 1.2 1.3 1.4 0 1.00 C iss C oss 0.10 C rss 0.01 0.0001 IXTA160N10T IXTP160N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 160 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA 100 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.001 ...

Page 5

... I = 25A 140 - - - - t d(off) 77 130 = 5 Ω 10V GS 74 120 = 50V 71 110 68 100 IXTA160N10T IXTP160N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 50V Amperes D Fig. 16. Resistive Turn-off d(off Ω 10V 50V 25A 50A 25A 50A 105 115 125 T - Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times v s ...

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