MOSFET N-CH 650V 17A TO-220FP

STF21N65M5

Manufacturer Part NumberSTF21N65M5
DescriptionMOSFET N-CH 650V 17A TO-220FP
ManufacturerSTMicroelectronics
SeriesMDmesh™
STF21N65M5 datasheet
 


Specifications of STF21N65M5

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs190 mOhm @ 8.5A, 10VDrain To Source Voltage (vdss)650V
Current - Continuous Drain (id) @ 25° C17AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs50nC @ 10VInput Capacitance (ciss) @ Vds1950pF @ 100V
Power - Max30WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
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STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V, 0.175 Ω , 17 A MDmesh™ V Power MOSFET
Features
V
@
R
DSS
DS(on)
Type
T
max
Jmax
STB21N65M5
STF21N65M5
< 0.190 Ω
STI21N65M5
710 V
STP21N65M5
STW21N65M5
1. Limited only by maximum temperature allowed
Worldwide best R
* area
DS(on)
Higher V
rating
DSS
High dv/dt capability
Excellent switching performance
100% avalanche tested
Application
Switching applications
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1.
Device summary
Order codes
STB21N65M5
STF21N65M5
STI21N65M5
STP21N65M5
STW21N65M5
November 2009
STB21N65M5, STF21N65M5
2
D
PAK, TO-220FP, TO-220, I
I
P
D
W
17 A
125 W
(1)
17 A
30 W
I²PAK
125 W
17 A
125 W
125 W
D²PAK
Figure 1.
Marking
Package
D²PAK
TO-220FP
21N65M5
I²PAK
TO-220
TO-247
Doc ID 15427 Rev 3
2
PAK, TO-247
3
1 2
3
2
3
1
1
TO-247
TO-220FP
Internal schematic diagram
Packaging
Tape and reel
Tube
Tube
Tube
Tube
3
2
1
TO-220
3
2
1
1/18
www.st.com
18

STF21N65M5 Summary of contents

  • Page 1

    ... Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 STW21N65M5 November 2009 STB21N65M5, STF21N65M5 2 D PAK, TO-220FP, TO-220 125 W ( I²PAK ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STB/F/I/P/W21N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

  • Page 5

    STB/F/I/P/W21N65M5 Table 6. Switching times Symbol t (v) Voltage delay time d t (v) Voltage rise time r t (i) Current fall time f t (off) Crossing time c Table 7. Source drain diode Symbol I Source-drain current SD (1) ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-220FP ...

  • Page 7

    STB/F/I/P/W21N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) V ...

  • Page 8

    Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.0 0.9 0.8 0.7 T ...

  • Page 9

    STB/F/I/P/W21N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

  • Page 10

    Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

  • Page 11

    STB/F/I/P/W21N65M5 Table 8. TO-220FP mechanical data Dim Dia Figure 25. TO-220FP drawing mechanical data Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 ...

  • Page 12

    Package mechanical data Dim 12/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

  • Page 13

    STB/F/I/P/W21N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

  • Page 14

    Package mechanical data 14/18 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

  • Page 15

    STB/F/I/P/W21N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

  • Page 16

    Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...

  • Page 17

    STB/F/I/P/W21N65M5 6 Revision history Table 9. Document revision history Date 24-Feb-2009 27-Feb-2009 11-Nov-2009 Revision 1 First release 2 Corrected package information on first page. 3 Document status promoted from preliminary data to datasheet. Doc ID 15427 Rev 3 Revision history ...

  • Page 18

    ... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...