STF21N65M5 STMicroelectronics, STF21N65M5 Datasheet - Page 7

• Manufacturer Part Number: STF21N65M5
• Description: MOSFET N-CH 650V 17A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB/F/I/P/W21N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
1000
V
100
(V)
(pF)
(A)
35
20
15
10
30
25
10
I
GS
12
10
C
D
0
5
0
2
8
6
4
1
0
0
0.1
V
Output characteristics
DS
V
5
GS
=10V
20
1
10
V
15
I
DD
D
=8.5A
40
10
=520V
20
25
100
60
30
6V
V
7V
5V
V
GS
Doc ID 15427 Rev 3
DS
Q
AM05493v1
V
AM05497v1
AM05496v1
g
(V)
DS
400
320
(nC)
480
80
0
240
160
Coss
Ciss
Crss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
E
oss
R
DS(on)
0.12
0.10
0.08
0.16
(µJ)
0.18
0.14
(A)
(Ω)
20
10
25
I
30
15
35
D
0
5
1
9
4
3
2
8
7
6
5
0
0
0
0
Transfer characteristics
100
2
2
V
GS
4
200 300
= 10 V
4
6
V
Electrical characteristics
DS
8
=15V
6
400
10 12
8
500 600
14
10
16
V
GS
AM05494v1
AM05495v1
AM05498v1
V
(V)
I
DS
D
(A)
(V)
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