STF21N65M5 STMicroelectronics, STF21N65M5 Datasheet - Page 8

MOSFET N-CH 650V 17A TO-220FP

STF21N65M5

Manufacturer Part Number
STF21N65M5
Description
MOSFET N-CH 650V 17A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STF21N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF21N65M5
Manufacturer:
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Company:
Part Number:
STF21N65M5
Quantity:
6 000
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.7
0.6
0.5
0.8
0.4
1.0
0.9
(µJ)
100
160
140
120
SD
-50
80
40
20
60
E
0
0
0
vs temperature
characteristics
(1)
T
-25
T
V
J
V
I
=-50°C
J
D
DD
GS
=150°C
10
=11A
=400V
=10V
10
0
20
25
20
50
30
I
D
75
30
=250 µA
40
100 125
Eon
T
J
=25°C
40
50
Eoff
I
SD
Doc ID 15427 Rev 3
AM05502v1
AM05500v1
AM05541v1
T
(A)
R
J
(°C)
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
R
BV
(norm)
DS(on)
1.07
1.05
1.03
0.99
0.97
0.95
1.01
0.93
DSS
2.1
1.9
1.5
0.7
0.5
1.7
1.3
1.1
0.9
-50
-50
temperature
-25
-25
V
I
D
GS
0
0
= 8.5 A
= 10 V
I
D
= 1 mA
25
25
VDSS
50
50
STB/F/I/P/W21N65M5
75
75
vs temperature
100
100
125
T
J
(°C)
AM05501v1
AM05499v1
T
J
(°C)

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