STF21N65M5 STMicroelectronics, STF21N65M5 Datasheet - Page 9

• Manufacturer Part Number: STF21N65M5
• Description: MOSFET N-CH 650V 17A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB/F/I/P/W21N65M5
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 15427 Rev 3
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
V
P
Vgs
Vds
Id
i
V
W
i
=20V=V
10%Vds
90%Vds
90%Vgs
P
w
on
on
2200
µF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
t
d
(v)
47kΩ
L
t
r
(v)
D.U.T.
t
c
(off)
47kΩ
100Ω
t
f
(i)
2200
µF
100nF
Inductive Load Turn - off
Test circuits
3.3
µF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
9/18
G
DD
DD