IRFP1405PBF International Rectifier, IRFP1405PBF Datasheet
IRFP1405PBF
Specifications of IRFP1405PBF
Available stocks
Related parts for IRFP1405PBF
IRFP1405PBF Summary of contents
Page 1
... Case-to-Sink, Flat, Greased Surface cs R Junction-to-Ambient * JA ® HEXFET is a registered trademark of International Rectifier. * www.irf.com G Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter PD - 95509A IRFP1405PbF ® HEXFET Power MOSFET 55V DSS R = 5.3m DS(on 95A D S TO-247AC Max. Units 160 110 95 640 310 W 2.0 W/° ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...
Page 3
VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 4.5V 10 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C ...
Page 4
0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = Ciss 6000 4000 Coss 2000 ...
Page 5
LIMITED BY PACKAGE 150 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ...
Page 6
D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...
Page 7
Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 1% Duty Cycle 500 95A 400 300 200 100 0 25 ...
Page 8
D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...
Page 9
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" TO-247AC packages are not recommended for Surface Mount Application. ...