IRFP2907ZPBF International Rectifier, IRFP2907ZPBF Datasheet

MOSFET N-CH 75V 90A TO-247AC

IRFP2907ZPBF

Manufacturer Part Number
IRFP2907ZPBF
Description
MOSFET N-CH 75V 90A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP2907ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
170 A
Gate Charge, Total
180 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
310 W
Resistance, Drain To Source On
4.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
97 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
180 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP2907ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP2907ZPBF
Manufacturer:
VISHAY
Quantity:
10 000
Features
l
l
l
l
l
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
HEXFET
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
j
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
i
G
d
IRFP2907ZPbF
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
0.24
–––
–––
10 lbf•in (1.1N•m)
D
S
-55 to + 175
TO-247AC
Max.
170
120
680
310
± 20
520
690
2.0
90
®
R
Power MOSFET
DS(on)
Max.
0.49
V
–––
40
DSS
I
D
= 90A
PD - 95480B
= 4.5m
= 75V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFP2907ZPBF Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance j R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com IRFP2907ZPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter jà 95480B ® ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Limited By Package 125 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 0. 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 1% Duty Cycle 500 90A 400 300 200 100 ...

Page 8

SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 9

EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" Notes: 1. For an Automotive Qualified version of this part ...

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