IXTT52N30P IXYS, IXTT52N30P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT52N30P
Manufacturer Part Number
IXTT52N30P
Description
MOSFET N-CH 300V 52A TO-268
Specifications of IXTT52N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
52
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
250
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-268
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
TM
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXTQ52N30P
IXTT52N30P
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
57
1.13/10 Nm/lb.in.
300
300
±20
±30
150
400
150
300
260
1.0
5.5
5.0
52
52
30
10
±100
250
Max.
5.0
25
66
V/ns
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
TO-3P (IXTQ)
TO-268 (IXTT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
V
R
I
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
D25
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
S
G
= 300
=
≤ ≤ ≤ ≤ ≤ 66 mΩ Ω Ω Ω Ω
S
D = Drain
TAB = Drain
52
DS99115E(12/05)
D (TAB)
(TAB)
A
V
Related parts for IXTT52N30P
IXTT52N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTQ52N30P IXTT52N30P Maximum Ratings 300 = 1 MΩ 300 GS ±20 ±30 52 150 1.0 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 260 (TO-3P) 1 ...
... I = 25A, -di/dt = 100 A/µ 100V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. , pulse test ...
... V - Volts D S Fig Norm alized to I DS(on) Value vs 10V GS 3 125ºC 2.2 J 1.8 1 Amperes D © 2006 IXYS All rights reserved 150 125 7V 100 3 2.8 2.6 2.4 2.2 2 1.8 1.6 6V 1.4 1 0.8 0.6 0 D25 D 55 ...
... T = 125º 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 25ºC 1 1.2 1.4 1000 C iss 100 C oss 10 C rss IXTQ 52N30P IXTT 52N30P Fig. 8. Transconductance T = -40º ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXTQ 52N30P IXTT 52N30P 100 1000 ...
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