IRFB4615PBF International Rectifier, IRFB4615PBF Datasheet
IRFB4615PBF
Specifications of IRFB4615PBF
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IRFB4615PBF Summary of contents
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... Gate Parameter @ 10V GS @ 10V Parameter j ij IRFB4615PbF HEXFET Power MOSFET D V DSS R typ. DS(on) max TO-220AB IRFB4615PbF G D Drain Max 140 144 0.96 ± - 175 300 x x 10lb in (1.1N m) 109 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– 1.045 0.50 – ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...
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175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...
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D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 ...
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100µA 3 250uA ID = 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...
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TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for ...