STP10NM65N STMicroelectronics, STP10NM65N Datasheet

MOSFET N-CH 650V 9A TO-220

STP10NM65N

Manufacturer Part Number
STP10NM65N
Description
MOSFET N-CH 650V 9A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP10NM65N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
480 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9 A
Power Dissipation
90000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
430mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
For Use With
497-6416 - BOARD EVAL L5991/STP10NK60Z
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7499-5
STP10NM65N

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP10NM65N
Manufacturer:
TOSHIBA
Quantity:
15 000
Part Number:
STP10NM65N
Manufacturer:
ST
0
Part Number:
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Manufacturer:
ST
Quantity:
20 000
Part Number:
STP10NM65N
Manufacturer:
ST
Quantity:
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Part Number:
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Manufacturer:
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Features
1. Limited only by maximum temperature allowed
Application
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
October 2008
STD10NM65N
STU10NM65N
STF10NM65N
STP10NM65N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
Type
STD10NM65N
STU10NM65N
STF10NM65N
STP10NM65N
Order codes
N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET
Device summary
(@Tjmax)
710 V
710 V
710 V
710 V
V
DSS
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
R
DS(on)
max
10NM65N
10NM65N
10NM65N
10NM65N
Marking
9 A
STP10NM65N - STU10NM65N
9 A
9 A
9 A
STD10NM65N - STF10NM65N
I
D
(1)
Rev 3
TO-220, TO-220FP, IPAK, DPAK
Figure 1.
TO-220FP
Package
TO-220FP
TO-220
TO-220
DPAK
IPAK
Internal schematic diagram
1
1
2
2
3
3
Packaging
Tape & reel
Tube
Tube
Tube
DPAK
IPAK
1
www.st.com
3
1
2
3
1/17
17

Related parts for STP10NM65N

STP10NM65N Summary of contents

Page 1

... It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STD10NM65N STF10NM65N STP10NM65N STU10NM65N October 2008 STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N TO-220, TO-220FP, IPAK, DPAK R DS(on max < 0.48 Ω < 0.48 Ω ( < ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...

Page 3

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) Drain current (pulsed Total dissipation at T TOT (3) Peak diode recovery voltage slope dv/dt Insulation withstand voltage (RMS) from all three ...

Page 4

... Q Gate-source charge gs Q Gate-drain charge gd 1. Pulsed: pulse duration = 300 µs, duty cycle 1. defined as a constant equivalent capacitance giving the same charging time as C oss eq. increases from 0 to 80% V 4/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Parameter Test conditions mA 520 max rating ...

Page 5

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics (curves) 2.1 Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for DPAK/IPAK Figure 7. 6/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-220FP Thermal impedance for DPAK/IPAK ...

Page 7

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance 7/17 ...

Page 8

... Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Figure 15. Normalized on resistance vs temperature Figure 17. Normalized BV vs temperature DSS ...

Page 9

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 3 Test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped inductive load test circuit Figure 23. Switching time waveform ...

Page 10

... JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N www.st.com ...

Page 11

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2 ...

Page 12

... Package mechanical data DIM Ø 12/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 1.7 1.15 1.7 4.95 5.2 2.4 2.7 10 10.4 16 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16 ...

Page 13

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Package mechanical data max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9.40 1.20 0068771_H ...

Page 14

... Package mechanical data DIM 14/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6 ...

Page 15

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N 5 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2 ...

Page 16

... Revision history 6 Revision history Table 9. Document revision history Date 26-Oct-2007 07-Feb-2008 14-Oct-2008 16/17 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Revision 1 Initial release. 2 Document status promoted from preliminary data to datasheet. Table 4: Avalanche characteristics 3 Changes has been corrected. ...

Page 17

... STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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