IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet

MOSFET N-CH 250V 60A TO-220AB

IRFB4332PBF

Manufacturer Part Number
IRFB4332PBF
Description
MOSFET N-CH 250V 60A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4332PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
5860pF @ 25V
Power - Max
390W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
60 A
Power Dissipation
390 W
Mounting Style
Through Hole
Gate Charge Qg
99 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Features
l
l
l
l
l
l
l
l
Description
Notes  through † are on page 8
www.irf.com
Absolute Maximum Ratings
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
R
R
175°C Operating Junction Temperature for
D
D
DM
RP
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
GS
D
D
J
STG
θJC
θCS
θJA
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Repetitive Peak Current gh
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Parameter
Parameter
MOSFET
GS
GS
PULSE
PDP SWITCH
@ 10V
@ 10V
V
V
R
T
J
DS
DS (Avalanche)
DS(ON)
G
max
min
Gate
G
typ. @ 10V
typ.
Typ.
0.50
–––
–––
Key Parameters
10lbxin (1.1Nxm)
S
D
-40 to + 175
IRFB4332PbF
Max.
230
120
390
200
300
±30
2.6
60
42
Drain
D
MOSFET
Max.
0.38
–––
62
250
300
175
29
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
W
V
A
N
m:
°C
G
V
V
D
S
1
9/8/08

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IRFB4332PBF Summary of contents

Page 1

... Notes  through † are on page 8 www.irf.com PDP SWITCH V min DS V typ. DS (Avalanche) R typ. @ 10V DS(ON) T max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS Parameter Typ. IRFB4332PbF Key Parameters 250 V 300 175 ° TO-220AB D S Drain Source MOSFET Max. Units ± 230 ...

Page 2

... IRFB4332PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... V DS, Drain-to -Source Voltage (V) Fig 5. Typical E vs. Drain-to-Source Voltage PULSE www.irf.com 100 7.0 8.0 Fig 4. Normalized On-Resistance vs. Temperature 190 200 IRFB4332PbF 1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 5.5V 10 ≤ 60μs PULSE WIDTH Tj = 175° ...

Page 4

... IRFB4332PbF 1400 L = 220nH 1200 C= 0.3μF C= 0.2μF C= 0.1μF 1000 800 600 400 200 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 10000 0V MHZ C iss = SHORTED C rss = C gd 8000 C oss = Ciss 6000 4000 Coss 2000 Crss 100 Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage ...

Page 5

... 35A 9 10 Fig 14. Maximum Avalanche Energy Vs. Temperature τ J τ J τ 1 τ 1 Ci= τi/Ri Ci= τi/Ri 0.0001 0.001 Rectangular Pulse Duration (sec) IRFB4332PbF 1000 TOP 800 BOTTOM 600 400 200 100 125 Starting Junction Temperature (°C) 180 ton= 1μs 160 Duty cycle = 0.25 ...

Page 6

... IRFB4332PbF D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μ 3mA I G Current Sampling Resistors Fig 20a. Gate Charge Test Circuit ...

Page 7

... A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE Fig 21c. E www.irf.com PULSE A C PULSE B VCC Fig 21b. t Test Waveforms PULSE IRFB4332PbF t ST Test Waveforms st 7 ...

Page 8

... IRFB4332PbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages are not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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