IXFH16N80P IXYS, IXFH16N80P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH16N80P
Manufacturer Part Number
IXFH16N80P
Description
MOSFET N-CH 800V 16A TO-247
Specifications of IXFH16N80P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
71nC @ 10V
Input Capacitance (ciss) @ Vds
4600pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.6
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
70
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
460
Rthjc, Max, (ºc/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 & PLUS220SMD
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
≤ I
GS
= 25°C to 150°C; R
= 25°C, pulse width limited by T
= 25°C
= 25°C to 150°C
= 25°C
= 25°C
= 25°C
= 25°C
≤ 150°C, R
TM
DM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 4 mA
G
= 0.5 I
DS
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
≤ V
T
J
= 125°C
DSS
JM
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
800
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
800
800
±30
±40
460
150
300
260
1.0
6.0
5.0
4.0
16
40
30
10
8
±100
250
600
Max.
5.0
25
V/ns
N/lb
mΩ
mJ
° C
° C
μA
μA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
J
TO-268 (IXFT)
TO-247 (IXFH)
PLUS220 (IXFV)
PLUS220SMD (IXFV...S)
G = Gate
S = Source
Features
Advantages
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G
G
G
D
D
G
S
S
S
= 800
= 16
≤ ≤ ≤ ≤ ≤ 600 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250
S
D = Drain
TAB = Drain
D (TAB)
DS99599E(07/06)
D (TAB)
ns
A
V
D (TAB)
Related parts for IXFH16N80P
IXFH16N80P Summary of contents
... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 1.0 ≤ DSS 460 -55 ...
... Source-Drain Diode Symbol Test Conditions Repetitive IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25°C, unless otherwise specified 0 pulse test DS D D25 = MHz 0.5 I ...
... Fig. 7. Input Adm ittance DS(on) vs. Drain Current 50 2 10V GS 2 1.8 25 º 125 C J 1.6 20 º 1.4 15 º - 0.8 4 4 Amperes - Volts © 2006 IXYS All rights reserved 24 = 10V 3.1 = 10V 7V 2.8 6V 2.5 2.2 1.9 5V 1.6 1.3 1 0 Value 125º ...
... Intrinsic Diode 125º 0.3 0.4 0.5 0.6 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 125ºC 20 25ºC - 40º 5 25º 0.8 0.9 1 1.1 1.00 0.10 0. ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved IXFH 26N60P IXFV 26N60P IXFV 26N60PS TO-268 (IXFT) Outline IXFT 26N60P PLUS220 (IXFV) Outline ...
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