IXFT88N30P IXYS, IXFT88N30P Datasheet

MOSFET N-CH 300V 88A D2PAK

IXFT88N30P

Manufacturer Part Number
IXFT88N30P
Description
MOSFET N-CH 300V 88A D2PAK
Manufacturer
IXYS
Series
Polar™ HiPerFET™r
Datasheet

Specifications of IXFT88N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
I
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247&TO-264)
TO-268
TO-247
TO-264
Test Conditions
V
V
V
V
V
HiPerFET
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 10V, I
= 0V, I
= V
= ± 20V, V
= V
DM
, V
GS
DSS
, I
, V
DD
D
D
D
= 250μA
≤ V
= 4mA
GS
= 0.5 • I
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Note 1
= 1M
T
Ω
J
= 125°C
JM
IXFH88N30P
IXFK88N30P
IXFT88N30P
-55 to +150
-55 to +150
Characteristic Values
Min.
300
2.5
1.13/10
Maximum Ratings
+150
± 20
± 30
600
300
260
300
300
220
10
75
88
60
10
2
6
Typ.
4
±100 nA
Nm/lb.in.
Max.
250 μA
5.0
40 mΩ
25 μA
V/ns
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
V
g
g
g
J
V
I
R
t
TO-268 (IXFT)
TO-247(IXFH)
TO-264 (IXFK)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
DC-DC Coverters
Battery Chargers
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
Applications
High Speed Power Switching
DS(on)
DSS
G
G
DS(ON)
D
D
≤ ≤ ≤ ≤ ≤ 40mΩ Ω Ω Ω Ω
= 300V
= 88A
≤ ≤ ≤ ≤ ≤ 200ns
S
S
and Q
G
Tab = Drain
D
S
G
= Drain
Tab
Tab
Tab
DS99216F(11/09)

Related parts for IXFT88N30P

IXFT88N30P Summary of contents

Page 1

... GS(th ± 20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2009 IXYS CORPORATION, All Rights Reserved IXFT88N30P IXFH88N30P IXFK88N30P Maximum Ratings 300 Ω 300 GS ± 20 ± 220 ≤ 150°C 10 600 -55 to +150 +150 -55 to +150 300 260 1.13/ Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 90 0.21 0.15 Characteristic Values Min. Typ. JM 100 0 .6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT88N30P IXFH88N30P IXFK88N30P TO-264 (IXFK) Outline Max Millimeter Dim. Min. Max 4.82 5.13 A1 2.54 2. 2.00 2. ...

Page 3

... Value 125º 25º 120 140 160 180 200 IXFT88N30P IXFH88N30P Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... V - Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC 6.0 6.5 7.0 7.5 8 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1,000 C iss C oss C rss IXFT88N30P IXFH88N30P Fig. 8. Transconductance 100 40º 25ºC 60 125º 100 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXFT88N30P IXFH88N30P IXFK88N30P 0.1 IXYS REF: T_88N30P(8S)11-18-09-A 1 ...

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