IXFH140N10P IXYS, IXFH140N10P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH140N10P
Manufacturer Part Number
IXFH140N10P
Description
MOSFET N-CH 100V 140A TO-247
Specifications of IXFH140N10P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
140A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
600W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
140 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
140
Rds(on), Max, Tj=25°c, (?)
0.011
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
155
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFETs
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
© 2006 IXYS All rights reserved
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Note 1
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 15 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
D
= 250 µA
= 4.0 mA
, V
G
= 0.5 I
= 300 A
= 4 Ω
DS
= 0
D25
(TO-247)
GS
= 1 MΩ
DD
T
J
≤ V
= 175° C
DSS
IXFH 140N10P
IXFT 140N10P
JM
,
100
Min.
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
9
100
100
140
300
600
175
300
260
±20
±30
2.5
6.0
5.0
75
60
80
10
±100
500
Max.
5.0
25
11
V/ns
m Ω
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
I
R
t
D25
rr
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DSS
Easy to mount
Space savings
High power density
DS(on)
G
D
S
G
S
D = Drain
TAB = Drain
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 150 ns
DS99213E(01/06)
100
140
11 mΩ Ω Ω Ω Ω
D (TAB)
D (TAB)
A
V
Related parts for IXFH140N10P
IXFH140N10P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 300 Note 1 © 2006 IXYS All rights reserved IXFH 140N10P IXFT 140N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 140 75 300 2.5 ≤ DSS 600 -55 ... +175 175 -55 ... +150 300 260 1.13/10 Nm/lb.in. 6.0 5.0 Characteristic Values Min ...
... Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
... V - Volts D S Fig Norm alized to 0.5 I DS(on) Value vs. Drain Current 3 2.75 2.5 2.25 2 1.75 1 15V GS 1. 100 150 I - Amperes D © 2006 IXYS All rights reserved º C 300 270 240 210 180 8V 150 120 1.2 1.4 1.6 º C 2.4 2 1 ...
... T = 150 0.4 0.6 0 Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 7.5 8 8.5 9 9.5 10 º C 1.2 1.4 1.6 1000 C iss 100 C oss C rss IXFH 140N10P IXFT 140N10P Fig. 8. Transconductance º ...
... © 2006 IXYS All rights reserved illis IXFH 140N10P IXFT 140N10P ...
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