IRFB3006PBF International Rectifier, IRFB3006PBF Datasheet
IRFB3006PBF
Specifications of IRFB3006PBF
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IRFB3006PBF Summary of contents
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... AR Thermal Resistance Symbol R Junction-to-Case k θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient jk θJA www.irf.com G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter IRFB3006PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited (Package Limited TO-220AB G D Drain Max ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C 100 25° 25V ...
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175°C 100 25°C 1 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 300 LIMITED BY PACKAGE 250 200 150 100 50 0 ...
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D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 10 Allowed avalanche Current vs ...
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Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 ...
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D.U.T + - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...
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EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 2000 ASS EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" TO-220AB packages are not recommended for Surface ...