IXFA3N80 IXYS, IXFA3N80 Datasheet
IXFA3N80
Manufacturer Part Number
IXFA3N80
Description
MOSFET N-CH 800V 3.6A TO-263
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFP3N80.pdf
(2 pages)
Specifications of IXFA3N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
685pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
3.6
Rds(on), Max, Tj=25°c, (?)
3.6
Ciss, Typ, (pf)
685
Qg, Typ, (nc)
24
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
100
Rthjc, Max, (ºc/w)
1.25
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Preliminary data sheet
© 2000 IXYS All rights reserved
S
GS
DS
GS
DS
GS
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J
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C
C
C
C
J
C
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£
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DM
±
GS
DSS
°
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D
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£
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DS
°
°
m
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D25
m
GS
DD
£
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DSS
£
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°
±
±
±
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m
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D25
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DSS
DS(on)
£ 250 ns
DS (on)
W
98746 (09/00)
D (TAB)
D (TAB)
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IXFA3N80 Summary of contents
Page 1
... J ° C ° C ° C ° C £ £ £ ° ° ± DSS D25 £ m © 2000 IXYS All rights reserved W GS ± ± £ DD DSS ° J ± ° J ° J £ DSS D25 W DS(on) £ 250 ° ° ° ° (on 98746 (09/00) ...
Page 2
... £ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: ° J D25 DSS D D25 DSS D D25 ° £ 4,835,592 4,850,072 IXFA 3N80 IXFP 3N80 TO-220 (IXFP) Outline Bottom Side TO-263 (IXFA) Outline m Dim. Millimeter Min. Max. A 4.06 4. ...