IXTT8P50 IXYS, IXTT8P50 Datasheet
IXTT8P50
Manufacturer Part Number
IXTT8P50
Description
MOSFET P-CH 500V 8A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH8P50.pdf
(2 pages)
Specifications of IXTT8P50
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
180W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
- 500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 8 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-8
Rds(on), Max, Tj=25°c, (?)
1.2
Ciss, Typ, (pf)
3400
Qg, Typ, (nc)
130
Trr, Typ, (ns)
400
Pd, (w)
180
Rthjc, Max, (k/w)
0.65
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTT8P50
Manufacturer:
IXYS
Quantity:
18 000
© 2005 IXYS All rights reserved
Standard Power
MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
GSM
AR
J
stg
DSS
DGR
GS
D
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
BV
V
V
V
V
V
V
R
C
C
C
C
C
J
J
GS(th)
GS
DS
GS
DS
GS
GS
DS(on)
DSS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= -10 V, I
Temperature Coefficient
Temperature Coefficient
Temperature Coefficient
GS
, I
D
D
DC
= -250 µA
= -250 µA
DSS
D
, V
= 0.5 • I
DS
= 0
D25
GS
= 1 MΩ
T
T
7P50
8P50
(T
J
J
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
J
IXTH 8P50
IXTT 8P50
-500
min.
-3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
-0.122
0.054
1.13/10 Nm/lb.in.
typ.
-500
-500
±20
±30
180
150
300
250
-32
30
-8
-8
6
5
max.
±100
-200
-5.0
0.6 %/K
1.5
1.2
-1
%/K
%/K
mA
µA
nA
mJ
° C
° C
° C
°C
°C
W
Ω
Ω
V
V
V
V
V
V
A
A
A
g
g
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate,
S = Source,
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
D25
DSS
DS(on)
DS (on)
G
HDMOS
S
=
D = Drain,
TAB = Drain
= -500 V
=
TM
DS94534F(02/05)
1.2 Ω Ω Ω Ω Ω
process
-8 A
D (TAB)
D (TAB)
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IXTT8P50 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS - 0.5 • I DS(on Temperature Coefficient DS(on) © 2005 IXYS All rights reserved IXTH 8P50 IXTT 8P50 Maximum Ratings -500 = 1 MΩ -500 GS ±20 ± 180 -55 ... +150 150 -55 ... +150 300 250 1.13/10 Nm/lb.in Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...