STP50NF25 STMicroelectronics, STP50NF25 Datasheet - Page 5

MOSFET N-CH 250V 45A TO-220

STP50NF25

Manufacturer Part Number
STP50NF25
Description
MOSFET N-CH 250V 45A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP50NF25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
69 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68.2nC @ 10V
Input Capacitance (ciss) @ Vds
2670pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
22A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.069 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
45 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7526-5
STP50NF25

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP50NF25
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP50NF25
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP50NF25,50NF25,
Manufacturer:
ST
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Part Number:
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Manufacturer:
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STB50NF25 - STP50NF25
Table 7.
Table 8.
Symbol
Symbol
t
t
I
I
I
d(on)
d(off)
V
RRM
RRM
SDM
I
Q
Q
t
SD
t
t
t
SD
r
f
rr
rr
rr
rr
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 13)
V
R
(see Figure 13)
I
I
V
I
V
(see Figure 18)
SD
SD
SD
DD
DD
G
G
DD
DD
= 45 A, di/dt = 100 A/µs,
= 4.7 Ω, V
= 4.7 Ω, V
= 45 A, di/dt = 100 A/µs,
= 45 A, V
= 125 V, I
= 125 V, I
= 60 V
= 60 V, Tj = 150 °C
Test conditions
Test conditions
(see Figure 18)
GS
D
D
GS
GS
= 22 A,
= 22 A,
= 0
= 10 V
= 10 V
Electrical characteristics
Min
Min
Typ
Typ
198
256
1.5
2.2
45
26
63
20
15
17
Max
Max Unit
180
1.5
45
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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