IRFSL4229PBF International Rectifier, IRFSL4229PBF Datasheet

MOSFET N-CH 250V 45A TO-262

IRFSL4229PBF

Manufacturer Part Number
IRFSL4229PBF
Description
MOSFET N-CH 250V 45A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFSL4229PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
48 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
45 A
Power Dissipation
330 W
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
l
l
l
l
l
l
Description
This HEXFET
per silicon area. Additional features of this MOSFET are 175°C operating juntion temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust
and reliable device.
* R
www.irf.com
Notes  through … are on page 8
V
I
I
I
I
P
P
T
T
R
R
175°C Operating Junction Temperature for
Absolute Maximum Ratings
Thermal Resistance
Reliable Operation
Improved Ruggedness
and Reliability
D
D
DM
RP
Advanced Process Technology
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Low Q
J
STG
GS
D
D
θJC
θJA
θJC
@ T
@ T
@T
@T
@ T
(end of life) for TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
G
= 100°C
for Fast Response
®
Power MOSFET utilizes the latest processing techniques to achieve low on-resistance
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Junction-to-Ambient
f
Parameter
Parameter
f
g
GS
GS
@ 10V
@ 10V
V
V
R
I
T
RP
J
DS
DS (Avalanche)
DS(ON)
G
max
max @ T
min
Gate
G
typ. @ 10V
typ.
C
Typ.
= 100°C
–––
–––
Key Parameters
IRFSL4229PbF
S
D
10lb
-40 to + 175
x
in (1.1N
Max.
180
330
190
300
±30
2.2
45
32
91
Drain
D
x
m)
0.45*
Max.
62
250
300
175
IRFSL4229PbF
D
42
91
TO-262
Source
G
S
D
Units
Units
W/°C
S
°C
W
V
A
N
m
01/04/10
°C
V
V
A
1

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IRFSL4229PBF Summary of contents

Page 1

... Gate Parameter @ 10V GS @ 10V GS g Parameter f f IRFSL4229PbF Key Parameters 250 typ. 300 100° 175 TO-262 S IRFSL4229PbF D S Drain Source Max. Units ± 180 91 330 W 190 2.2 W/°C - 175 °C 300 x x 10lb in (1. Typ. Max. Units ––– ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...

Page 5

125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit DUT ...

Page 7

A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...

Page 8

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 Note: For the most current drawing please refer to IR website at ...

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