IXFT4N100Q IXYS, IXFT4N100Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFT4N100Q
Manufacturer Part Number
IXFT4N100Q
Description
MOSFET N-CH 1000V 4A TO-268
Specifications of IXFT4N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 1.5mA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1050pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
4
Rds(on), Max, Tj=25°c, (?)
3.0
Ciss, Typ, (pf)
1050
Qg, Typ, (nc)
39
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
156
Rthjc, Max, (ºc/w)
0.80
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
J
JM
stg
L
DSS
GS(th)
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
d
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
S
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
J
J
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
DSS
, di/dt £ 100 A/ms, V
, I
D
D
DC
D
= 1 mA
= 1.5 mA
, V
= 0.5 I
G
= 2 W
DS
g
= 0
, High dv/dt
D25
GS
= 1 MW
DD
T
T
£ V
J
J
(T
J
= 125°C
DSS
= 25°C
= 25°C, unless otherwise specified)
JM
,
1000
min.
3.0
-55 to +150
-55 to +150
IXFH 4N100Q
IXFT 4N100Q
Characteristic Values
1.13/10
Maximum Ratings
typ.
150
150
300
1000
1000
±20
±30
700
16
20
6
4
5
4
4
±100
max.
5.0
3.0
Nm/lb.in.
50
1
V/ns
mJ
mJ
mA
°C
°C
°C
°C
W
nA
mA
V
V
V
V
V
V
A
A
A
W
g
g
V
I
R
t
Features
• IXYS advanced low Q
• Low gate charge and capacitances
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
S = Source
D25
rr
- easier to drive
- faster switching
rated
flammability classification
DSS
DS(on)
£ 250 ns
DS (on)
G
G
D
S
S
= 1000 V
=
=
TAB = Drain
D
g
= Drain
process
98648A (03/24/00)
3.0 W
(TAB)
4 A
(TAB)
1 - 4
Related parts for IXFT4N100Q
IXFT4N100Q Summary of contents
... V DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 4N100Q IXFT 4N100Q Maximum Ratings 1000 = 1 MW 1000 GS ±20 ± 700 £ ...
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 4N100Q IXFT 4N100Q TO-247 AD (IXFH) Outline ...
... V - Volts DS Figure 5. R normalized to 0.5 I DS(on) 2 10V 2.2 2 125°C 1.8 1.6 1 25°C 1.2 1.0 0 Amperes D © 2000 IXYS All rights reserved O C Figure 2. Extended Output Characteristics at 125 Figure 4. Admittance Curves value vs. I D25 Figure 6. R value vs. I D25 IXFH 4N100Q ...
... Figure 9. Forward Voltage Drop of the Intrinsic Diode 125 0.2 0.4 0.6 0 Volts SD Figure 11. Transient Thermal Resistance 1.00 0.10 0. © 2000 IXYS All rights reserved 2000 1000 100 1.0 1 Pulse Width - Seconds IXFH 4N100Q IXFT 4N100Q Figure 8. Capacitance Curves Ciss f = 1MHz Coss Crss 10 0 ...
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