IRFB3077PBF International Rectifier, IRFB3077PBF Datasheet
IRFB3077PBF
Specifications of IRFB3077PBF
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IRFB3077PBF Summary of contents
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... DSS R typ. 2.8m : DS(on) max. 3. 210A c D (Silicon Limited) I 120A S (Package Limited TO-220AB IRFB3077PbF D S Drain Source Max. 210c 150c 120 850 370 2.5 ± 20 2.5 - 175 300 10lbxin (1.1Nxm) 200 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 25V ≤ ...
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175°C 100.0 10 25°C 1.0 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 240 LIMITED BY PACKAGE 200 160 120 ...
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D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 10 Allowed avalanche Current vs ...
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Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 900 1000 ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...
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E XAMPL HIS 1010 L OT CODE 1789 19, 1997 INE "C" Note: ...