IXTA10P50P IXYS, IXTA10P50P Datasheet - Page 3

MOSFET P-CH 500V 10A TO-263

IXTA10P50P

Manufacturer Part Number
IXTA10P50P
Description
MOSFET P-CH 500V 10A TO-263
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTA10P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2840pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
2670
Qg, Typ, (nc)
50
Trr, Typ, (ns)
414
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA10P50P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2009 IXYS CORPORATION, All Rights Reserved
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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