STB32N65M5 STMicroelectronics, STB32N65M5 Datasheet

MOSFET N-CH 650V 24A D2PAK

STB32N65M5

Manufacturer Part Number
STB32N65M5
Description
MOSFET N-CH 650V 24A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB32N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
119 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
3320pF @ 100V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.119 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
15 A, 24 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10564-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB32N65M5
Manufacturer:
ST
Quantity:
12 000
Part Number:
STB32N65M5
Manufacturer:
ST
0
Company:
Part Number:
STB32N65M5
Quantity:
5 000
Features
1. Limited only by maximum temperature allowed
Application
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1.
September 2009
STW32N65M5
STB32N65M5
STF32N65M5
STP32N65M5
STI32N65M5
Worldwide best R
Higher V
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Switching applications
Type
STW32N65M5
STB32N65M5
STP32N65M5
N-channel 650 V, 0.095 Ω , 24 A, MDmesh™ V Power MOSFET
STF32N65M5
Order codes
STI32N65M5
DSS
Device summary
rating
STB32N65M5, STF32N65M5, STI32N65M5
V
T
710 V
710 V
710 V
710 V
710 V
DSS
Jmax
DS(on)
@
* area
R
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
< 0.119 Ω
DS(on)
in D
max
32N65M5
32N65M5
32N65M5
32N65M5
32N65M5
Marking
2
PAK, I
24 A
24 A
24 A
24 A
24 A
Doc ID 15316 Rev 3
I
D
STP32N65M5, STW32N65M5
(1)
2
PAK, TO-220FP, TO-220, TO-247
Figure 1.
D²PAK
TO-220FP
Package
TO-220
TO-247
TO-220
D²PAK
I²PAK
1
3
Internal schematic diagram
1
2
3
TO-220FP
1
2
3
Tape and reel
Packaging
TO-247
Tube
Tube
Tube
Tube
I²PAK
www.st.com
1
2
1 2
1/18
3
3
18

Related parts for STB32N65M5

STB32N65M5 Summary of contents

Page 1

... STB32N65M5, STF32N65M5, STI32N65M5 N-channel 650 V, 0.095 Ω MDmesh™ V Power MOSFET Features V @ DSS Type R DS(on) T Jmax < 0.119 Ω STB32N65M5 710 V < 0.119 Ω STF32N65M5 710 V < 0.119 Ω STI32N65M5 710 V < 0.119 Ω STP32N65M5 710 V < 0.119 Ω STW32N65M5 710 V 1. Limited only by maximum temperature allowed ■ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P/W32N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/F/I/P/W32N65M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 4. Safe operating area for TO-247 ...

Page 7

STB/F/I/P/W32N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) V =520V ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T ...

Page 9

STB/F/I/P/W32N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STB/F/I/P/W32N65M5 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim 12/18 TO-220FP mechanical data ...

Page 13

STB/F/I/P/W32N65M5 Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID ...

Page 14

Package mechanical data Dim 14/18 I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 ...

Page 15

STB/F/I/P/W32N65M5 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB/F/I/P/W32N65M5 6 Revision history Table 8. Document revision history Date 16-Jan-2009 01-Sep-2009 30-Sep-2009 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. 3 Corrected V value on GS Doc ID 15316 Rev 3 Revision history Changes ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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