IXFH69N30P IXYS, IXFH69N30P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH69N30P
Manufacturer Part Number
IXFH69N30P
Description
MOSFET N-CH 300V 69A TO-247
Specifications of IXFH69N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4960pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
69
Rds(on), Max, Tj=25°c, (?)
0.049
Ciss, Typ, (pf)
4960
Qg, Typ, (nc)
156
Trr, Typ, (ns)
100
Trr, Max, (ns)
200
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
PolarHT
Power MOSFET
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
© 2006 IXYS All rights reserved
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFH 69N30P
IXFT 69N30P
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
200
500
150
300
260
1.5
69
69
50
10
6
4
±100
250
Max.
5.0
25
49
V/ns
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
TO-247 (IXFH)
Features
l
l
l
l
Advantages
l
l
l
TO-268 (IXFT)
V
I
R
t
D25
rr
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Easy to mount
Space savings
High power density
DS(on)
DSS
G = Gate
S = Source
G
G
D
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
300
200
D = Drain
TAB = Drain
69
49
DS99220E(01/06)
D (TAB)
D (TAB)
mΩ Ω Ω Ω Ω
ns
A
V
Related parts for IXFH69N30P
IXFH69N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 69N30P IXFT 69N30P Maximum Ratings 300 = 1 MΩ 300 GS ±20 ±30 69 200 1.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 260 1 ...
... F -di/dt = 100 A/µ 100 TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test ...
... Fig Norm alized to I DS(on) Value vs 10V GS 3 125ºC 2.2 J 1.8 1 100 I - Amperes D © 2006 IXYS All rights reserved 180 160 140 120 100 2.5 3 3.5 4 2.8 2.6 2.4 2.2 1.8 1.6 1.4 1.2 0.8 0.6 0 ...
... T = 125º 0.4 0.5 0.6 0.7 0.8 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 100 6 25ºC 1 1.1 1.2 1.3 1000 C iss 100 C oss 10 C rss IXFH 69N30P IXFT 69N30P Fig ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXFH 69N30P IXFT 69N30P 100 1000 ...
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