IXTK170N10P IXYS, IXTK170N10P Datasheet

MOSFET N-CH 100V 170A TO-264

IXTK170N10P

Manufacturer Part Number
IXTK170N10P
Description
MOSFET N-CH 100V 170A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK170N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
198nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
714W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
170 A
Power Dissipation
714 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
170
Rds(on), Max, Tj=25°c, (?)
0.009
Ciss, Typ, (pf)
6000
Qg, Typ, (nc)
198
Trr, Typ, (ns)
120
Pd, (w)
715
Rthjc, Max, (k/w)
0.21
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK170N10P
Manufacturer:
IXYS
Quantity:
35 500
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
I
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264 & TO-3P)
TO-268
TO-3P
TO-264
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 10V, I
= 0V, I
= V
= ± 20V, V
= V
= 15V, I
DM
GS
DSS
, V
, I
, V
DD
D
D
D
= 250μA
D
≤ V
= 250μA
GS
= 0.5 • I
= 350A
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 175°C
, Note 1
= 1M
T
Ω
J
= 150°C
JM
IXTQ170N10P
IXTK170N10P
IXTT170N10P
-55 to +175
-55 to +175
Min.
100
2.5
Characteristic Values
1.13/10
Maximum Ratings
+175
± 20
10.0
± 30
160
715
300
170
260
100
100
350
4.0
5.5
10
60
2
Typ.
7
±100 nA
Nm/lb.in.
Max.
250 μA
5.0
25 μA
9 mΩ
V/ns
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
V
g
g
g
J
V
I
R
TO-268 (IXTT)
TO-3P (IXTQ)
TO-264 (IXTK)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
G
D
D
DS(ON)
S
S
≤ ≤ ≤ ≤ ≤ 9mΩ Ω Ω Ω Ω
= 100V
= 170A
and Q
G
Tab = Drain
D
S
G
= Drain
Tab
Tab
Tab
DS99176F(01/10)

Related parts for IXTK170N10P

IXTK170N10P Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 V = 15V 350A GS D © 2010 IXYS CORPORATION, All Rights Reserved IXTT170N10P IXTQ170N10P IXTK170N10P Maximum Ratings 100 Ω 100 GS ± 20 ± 30 170 160 350 ≤ 175° 715 -55 to +175 +175 -55 to +175 300 260 1 ...

Page 2

... DSS D D25 107 0.25 0.15 Characteristic Values Min. Typ. JM 120 2.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTT170N10P IXTQ170N10P IXTK170N10P TO-3P (IXTQ) Outline Max 0.21 °C/W °C/W °C/W Max. TO-264 AA ( IXTK) Outline 170 A 350 A 1 μ ...

Page 3

... Value vs. D 180 160 140 120 100 25º 200 250 300 350 -50 IXTT170N10P IXTQ170N10P IXTK170N10P Fig. 2. Extended Output Characteristics @ 10V 0.0 0.5 1.0 1.5 2.0 2.5 3 Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS I ...

Page 4

... T = 25º 150º 1.2 1.4 1.6 1,000 100 C iss C oss 10 C rss IXTT170N10P IXTQ170N10P IXTK170N10P Fig. 8. Transconductance 40ºC J 25ºC 150º 120 160 200 I - Amperes D Fig. 10. Gate Charge V = 50V 85A 10mA 100 120 140 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTT170N10P IXTQ170N10P IXTK170N10P 0.1 1 IXYS REF: T_170N10P(8S)01-07-10-C 10 ...

Related keywords